Andrew Wayne Ott

  • 2509 Citations
19942018
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Personal profile

Education/Academic qualification

Chemistry, PhD, University of Colorado Boulder

… → 1997

Chemistry, BS, University of California at Santa Barbara

… → 1992

Fingerprint Dive into the research topics where Andrew Wayne Ott is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

Surface chemistry Chemical Compounds
Surface reactions Chemical Compounds
chemistry Physics & Astronomy
Aluminum Oxide Chemical Compounds
Film growth Engineering & Materials Science
surface reactions Physics & Astronomy
Substrates Engineering & Materials Science
Thin films Engineering & Materials Science

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Grants 2009 2018

Research Output 1994 2018

  • 2509 Citations
  • 18 Article
  • 3 Conference article
  • 2 Conference contribution
  • 1 Comment/debate
4 Citations (Scopus)

Building a Sustainable Portfolio of Core Facilities: a Case Study

Hockberger, P. E., Weiss, J., Rosen, A. & Ott, A. W., Sep 1 2018, In : Journal of biomolecular techniques : JBT. 29, 3, p. 79-92 14 p.

Research output: Contribution to journalArticle

Facility Regulation and Control
Research Personnel
Administrative Personnel
Research
Ecosystem
1 Citation (Scopus)

Erratum to "Al2O3 thin film growth on Si (100) using binary reaction sequence chemistry" [Thin Solid Films 292 (1997) 135-144] (DOI: 10.1016/S0040-6090(96)08934-1)

Ott, A. W., Klaus, J. W., Johnson, J. M. & George, S. M., Aug 31 2009, In : Thin Solid Films. 517, 20, 1 p.

Research output: Contribution to journalComment/debate

Film growth
chemistry
Thin films
thin films
75 Citations (Scopus)

NHC-Catalyzed Reactions of Aryloxyacetaldehydes: A Domino Elimination/Conjugate Addition/Acylation Process for the Synthesis of Substituted Coumarins

Phillips, E. M., Wadamoto, M., Roth, H. S., Ott, A. W. & Scheidt, K. A., 2009, In : Organic Letters. 11, p. 105-108

Research output: Contribution to journalArticle

Coumarins
acylation
Acylation
carbenes
elimination

A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 μm2 SRAM cell

Bai, P., Auth, C., Balakrishnan, S., Bost, M., Brain, R., Chikarmane, V., Heussner, R., Hussein, M., Hwang, J., Ingerly, D., James, R., Jeong, J., Kenyon, C., Lee, E., Lee, S. H., Lindert, N., Liu, M., Ma, Z., Marieb, T., Murthy, A. & 15 others, Nagisetty, R., Natarajan, S., Neirynck, J., Ott, A., Parker, C., Sebastian, J., Shaheed, R., Sivakumar, S., Steigerwald, J., Tyagi, S., Weber, C., Woolery, B., Yeoh, A., Zhang, K. & Bohr, M., Dec 1 2004, In : Technical Digest - International Electron Devices Meeting, IEDM. p. 657-660 4 p.

Research output: Contribution to journalConference article

Static random access storage
Oxides
logic
Transistors
cells

Impact of interfacial chemistry on adhesion and electromigration in Cu interconnects

Zhou, Y., Scherban, T., Xu, G., He, J., Miner, B., Jan, C. H., Ott, A., O'Loughlin, J., Ingerly, D. & Leu, J., Dec 1 2004, In : Advanced Metallization Conference (AMC). p. 189-199 11 p.

Research output: Contribution to journalConference article

Electromigration
Surface chemistry
Adhesion
Materials properties
Metals