• 876 Citations
19952020

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Article
2020

High power continuous wave operation of single mode quantum cascade lasers up to 5 W spanning λ∼3.8-8.3 µm

Lu, Q., Slivken, S., Wu, D. & Razeghi, M., May 11 2020, In : Optics Express. 28, 10, p. 15181-15188 8 p.

Research output: Contribution to journalArticle

Open Access
2 Scopus citations

Room temperature quantum cascade lasers with 22% wall plug efficiency in continuous-wave operation

Wang, F., Slivken, S. B., Wu, D. & Razeghi, M., Jun 8 2020, In : Optics Express. 28, 12, p. 17532-17538 7 p.

Research output: Contribution to journalArticle

Open Access
2019
Open Access
6 Scopus citations

Extended short wavelength infrared heterojunction phototransistors based on type II superlattices

Dehzangi, A., McClintock, R., Wu, D., Haddadi, A., Chevallier, R. & Razeghi, M., May 13 2019, In : Applied Physics Letters. 114, 19, 191109.

Research output: Contribution to journalArticle

4 Scopus citations

High-power, continuous-wave, phase-locked quantum cascade laser arrays emitting at 8 μm

Zhou, W., Lu, Q., Wu, D., Slivken, S. B. & Razeghi, M., Jan 1 2019, In : Optics Express. 27, 11, p. 15776-15785 10 p.

Research output: Contribution to journalArticle

4 Scopus citations
13 Scopus citations

High speed antimony-based superlattice photodetectors transferred on sapphire

Dehzangi, A., McClintock, R., Wu, D., Li, J., Johnson, S. M., Dial, E. & Razeghi, M., Nov 1 2019, In : Applied Physics Express. 12, 11, 116502.

Research output: Contribution to journalArticle

Open Access
2 Scopus citations
2 Scopus citations

Room temperature terahertz semiconductor frequency comb

Lu, Q., Wang, F., Wu, D., Slivken, S. & Razeghi, M., Dec 1 2019, In : Nature communications. 10, 1, 2403.

Research output: Contribution to journalArticle

Open Access
7 Scopus citations
6 Scopus citations
Open Access
7 Scopus citations
2018
9 Scopus citations

Progress in monolithic, broadband, widely tunable midinfrared quantum cascade lasers

Razeghi, M., Zhou, W., Mcclintock, R., Wu, D. & Slivken, S., Jan 1 2018, In : Optical Engineering. 57, 1, 011018.

Research output: Contribution to journalArticle

3 Scopus citations

Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD

Wu, D. H., Zhang, Y. Y. & Razeghi, M., Mar 12 2018, In : Applied Physics Letters. 112, 11, 111103.

Research output: Contribution to journalArticle

11 Scopus citations

Shortwave quantum cascade laser frequency comb for multi-heterodyne spectroscopy

Lu, Q. Y., Manna, S., Wu, D. H., Slivken, S. & Razeghi, M., Apr 2 2018, In : Applied Physics Letters. 112, 14, 141104.

Research output: Contribution to journalArticle

17 Scopus citations

Single-mode, high-power, mid-infrared, quantum cascade laser phased arrays

Zhou, W., Wu, D., Lu, Q. Y., Slivken, S. & Razeghi, M., Dec 1 2018, In : Scientific reports. 8, 1, 14866.

Research output: Contribution to journalArticle

7 Scopus citations
2017

Dispersion compensated mid-infrared quantum cascade laser frequency comb with high power output

Lu, Q., Manna, S., Slivken, S. B., Wu, D. & Razeghi, M., Apr 1 2017, In : AIP Advances. 7, 4, 045313.

Research output: Contribution to journalArticle

9 Scopus citations

High efficiency quantum cascade laser frequency comb

Lu, Q., Wu, D., Slivken, S. & Razeghi, M., Mar 6 2017, In : Scientific reports. 7, 43806.

Research output: Contribution to journalArticle

17 Scopus citations

High power, low divergent, substrate emitting quantum cascade ring laser in continuous wave operation

Wu, D. & Razeghi, M., Mar 1 2017, In : APL Materials. 5, 3, 035505.

Research output: Contribution to journalArticle

9 Scopus citations
7 Scopus citations

Quantum cascade laser :Breakthrough for advanced remote detection

Razeghi, M., Zhou, W., Wu, D., McClintock, R. & Slivken, S., Dec 2017, Photonics Spectra, 51, 12, p. 46-49 4 p.

Research output: Contribution to specialist publicationArticle

2016

Monolithically, widely tunable quantum cascade lasers based on a heterogeneous active region design

Zhou, W., Bandyopadhyay, N., Wu, D., McClintock, R. P. & Razeghi, M., Jun 8 2016, In : Scientific Reports. 6, 25213.

Research output: Contribution to journalArticle

30 Scopus citations
63 Scopus citations
2009

Long-wavelength emission InAs quantum dots grown on lnGaAs metamorphic buffers

Wu, B. P., Wu, D., Xiong, Y. H., Huang, S. S., Ni, H. Q., Xu, Y. Q. & Niu, Z. C., Feb 1 2009, In : Journal of Nanoscience and Nanotechnology. 9, 2, p. 1333-1336 4 p.

Research output: Contribution to journalArticle

Metamorphic InGaAs quantum well laser diodes at 1.5μm on GaAs grown by molecular beam epitaxy

Wang, H. L., Wu, D., Wu, B. P., Ni, H. Q., Huang, S. S., Xiong, Y. H., Wang, P. F., Han, Q., Niu, Z. C., Tngring, I. & Wang, S. M., Jun 3 2009, In : Chinese Physics Letters. 26, 1, 014214.

Research output: Contribution to journalArticle

6 Scopus citations

Time-resolved photoluminescence of metamorphic inGaAs quantum wells

Ma, S. S., Wang, B. R., Sun, B. Q., Wu, D., Ni, H. Q. & Niu, Z. C., Nov 16 2009, In : Chinese Physics Letters. 26, 10, 107803.

Research output: Contribution to journalArticle

2008

High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth

Huang, S. S., Niu, Z. C., Zhan, F., Ni, H. Q., Zhao, H., Wu, D. & Sun, Z., Jan 1 2008, In : Chinese Physics B. 17, 1, p. 323-327 5 p.

Research output: Contribution to journalArticle

7 Scopus citations

Low threshold current density 1.3μm metamorphic InGaAs/GaAs quantum well laser diodes

Wu, D., Wang, H., Wu, B., Ni, H., Huang, S., Xiong, Y., Wang, P., Han, Q., Niu, Z., Tångring, I. & Wang, S. M., Mar 31 2008, In : Electronics Letters. 44, 7, p. 474-475 2 p.

Research output: Contribution to journalArticle

25 Scopus citations
2007

1.58 μm InGaAs quantum well laser on GaAs

T̊ngring, I., Ni, H. Q., Wu, B. P., Wu, D., Xiong, Y. H., Huang, S. S., Niu, Z. C., Wang, S. M., Lai, Z. H. & Larsson, A., Dec 6 2007, In : Applied Physics Letters. 91, 22, 221101.

Research output: Contribution to journalArticle

51 Scopus citations

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 μ m grown by molecular beam epitaxy

Ni, H. Q., Niu, Z. C., Fang, Z. D., Huang, S. S., Zhang, S. Y., Wu, D., Shun, Z., Han, Q. & Wu, R. H., Apr 1 2007, In : Journal of Crystal Growth. 301-302, SPEC. ISS., p. 125-128 4 p.

Research output: Contribution to journalArticle

5 Scopus citations

Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

Wu, B. P., Wu, D., Ni, H. Q., Huang, S. S., Zhan, F., Xiong, Y. H., Xu, Y. Q. & Niu, Z. C., Dec 1 2007, In : Chinese Physics Letters. 24, 12, p. 3543-3546 4 p.

Research output: Contribution to journalArticle

5 Scopus citations
2006

1.3 μm InGaAs/InAs/GaAs self-assembled quantum dot laser diode grown by molecular beam epitaxy

Niu, Z., Ni, H., Fang, Z., Gong, Z., Zhang, S., Wu, D., Sun, Z., Zhao, H., Peng, H., Han, Q. & Wu, R., Mar 1 2006, In : Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 27, 3, p. 482-488 7 p.

Research output: Contribution to journalArticle

7 Scopus citations

Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy

Zhao, H., Xu, Y. Q., Ni, H. Q., Zhang, S. Y., Wu, D., Han, Q., Wu, R. H. & Niu, Z. C., Feb 1 2006, In : Journal of Applied Physics. 99, 3, 034903.

Research output: Contribution to journalArticle

9 Scopus citations

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

Wu, D., Niu, Z. C., Zhang, S. Y., Ni, H. Q., He, Z. H., Zhao, H., Peng, H. L., Yang, X. H., Han, Q. & Wu, R. H., Apr 1 2006, In : Chinese Physics Letters. 23, 4, p. 1005-1008 4 p.

Research output: Contribution to journalArticle

1 Scopus citations

The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content

Wu, D., Niu, Z. C., Zhang, S., Ni, H., He, Z., Sun, Z., Han, Q. & Wu, R., May 1 2006, In : Journal of Crystal Growth. 290, 2, p. 494-497 4 p.

Research output: Contribution to journalArticle

17 Scopus citations
2005

Effect of rapid thermal annealing on highly strained InGaAs/GaAs quantum well

Miao, Z., Xu, Y., Zhang, S., Wu, D., Zhao, H. & Niu, Z., Sep 1 2005, In : Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 26, 9, p. 1749-1752 4 p.

Research output: Contribution to journalArticle

1 Scopus citations

GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Niu, Z. C., Zhang, S. Y., Ni, H. Q., Wu, D., Zhao, H., Peng, H. L., Xu, Y. Q., Li, S. Y., He, Z. H., Ren, Z. W., Han, Q., Yang, X. H., Du, Y. & Wu, R. H., Dec 12 2005, In : Applied Physics Letters. 87, 23, p. 1-3 3 p., 231121.

Research output: Contribution to journalArticle

111 Scopus citations

High structural and optical quality 1.3 μm GaInNAsGaAs quantum wells with higher indium content grown by molecular-beam expitaxy

Zhang, S., Niu, Z., Ni, H., Wu, D., He, Z., Sun, Z., Han, Q. & Wu, R., Oct 17 2005, In : Applied Physics Letters. 87, 16, p. 1-3 3 p., 161911.

Research output: Contribution to journalArticle

8 Scopus citations

Material growth and device fabrication of GaAs based 1.3 μm GaInNAs quantum well laser diodes

Niu, Z., Han, Q., Ni, H., Yang, X., Xu, Y., Du, Y., Zhang, S., Peng, H., Zhao, H., Wu, D., Li, S., He, Z., Ren, Z. & Wu, R., Sep 1 2005, In : Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 26, 9, p. 1860-1864 5 p.

Research output: Contribution to journalArticle

5 Scopus citations

Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance

Qu, Y. H., Jiang, D. S., Wu, D., Niu, Z. C. & Sun, Z., Aug 1 2005, In : Chinese Physics Letters. 22, 8, p. 2088-2091 4 p.

Research output: Contribution to journalArticle

6 Scopus citations
1999

High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm

Wu, D., Lane, B., Mohseni, H., Diaz, J. & Razeghi, M., Mar 1 1999, In : Applied Physics Letters. 74, 9, p. 1194-1196 3 p.

Research output: Contribution to journalArticle

19 Scopus citations
1998

Recent development in Sb-based MWIR interband laser diodes

Wu, D. & Razeghi, M., Jan 1 1998, In : Opto-electronics Review. 1998, 3, p. 195-205 11 p.

Research output: Contribution to journalArticle

1997

Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition

Lane, B., Wu, D., Rybaltowski, A., Yi, H., Diaz, J. & Razeghi, M., Jan 27 1997, In : Applied Physics Letters. 70, 4, p. 443-445 3 p.

Research output: Contribution to journalArticle

40 Scopus citations

High power InAsSb/InPAsSb/InAs mid-infrared lasers

Rybaltowski, A., Xiao, Y., Wu, D., Lane, B., Yi, H., Feng, H., Diaz, J. & Razeghi, M., Oct 27 1997, In : Applied Physics Letters. 71, 17, p. 2430-2432 3 p.

Research output: Contribution to journalArticle

19 Scopus citations

InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal-organic chemical-vapor deposition

Diaz, J., Yi, H., Rybaltowski, A., Lane, B., Lukas, G., Wu, D., Kim, S., Erdtmann, M., Kaas, E. & Razeghi, M., Jan 6 1997, In : Applied Physics Letters. 70, 1, p. 40-42 3 p.

Research output: Contribution to journalArticle

21 Scopus citations

InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 μm grown by metal-organic chemical vapor deposition

Wu, D., Kaas, E., Diaz, J., Lane, B., Rybaltowski, A., Yi, H. J. & Razeghi, M., Feb 1 1997, In : IEEE Photonics Technology Letters. 9, 2, p. 173-175 3 p.

Research output: Contribution to journalArticle

22 Scopus citations

Stability of far fields in double heterostructure and multiple quantum well InAsSb/lnPAsSb/lnAs midinfrared lasers

Yi, H., Rybaltowski, A., Diaz, J., Wu, D., Lane, B., Xiao, Y. & Razeghi, M., Jun 16 1997, In : Applied Physics Letters. 70, 24, p. 3236-3238 3 p.

Research output: Contribution to journalArticle

6 Scopus citations