Professor Lauhon’s group pursues fundamental insights into nanoscale structure-property relationships to provide a foundation for engineering new techologies based on low-dimensional materials. Towards that end, they develop new approaches to synthesize 1-D nanowires and 2-D semiconductors, conduct 3-D nanotomography of composition and strain, exploit scanning probe microscopies to image the properties of nanomaterial-based devices, and use modeling extensively in the design and interpretation of material and device properties. Current focus areas include non-planar III-As-Sb nanowire networks for quantum computing applications, vertical diodes in GaN for high power applications, atomic layer deposition of transition metal oxides and chalcogenides, mixed-dimensional heterostructures integrating 2-D transition metal dichalcogenides for photodetection and energy conversion, and devices for novel modes of computing.