Ryan P McClintock

  • 2210 Citations
20012021
If you made any changes in Pure, your changes will be visible here soon.

Personal profile

Education/Academic qualification

PhD, Northwestern University

Fingerprint Dive into the research topics where Ryan P McClintock is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 3 Similar Profiles
photodiodes Physics & Astronomy
photometers Physics & Astronomy
avalanches Physics & Astronomy
Photodetectors Engineering & Materials Science
light emitting diodes Physics & Astronomy
Substrates Engineering & Materials Science
focal plane devices Physics & Astronomy
metalorganic chemical vapor deposition Physics & Astronomy

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Grants 2008 2021

focal plane devices
metalorganic chemical vapor deposition
superlattices
format
molecular beam epitaxy
Students
Power electronics
Supply chains
Industry
Energy gap

Research Output 2001 2019

Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers

Razeghi, M., Dehzangi, A., Wu, D., McClintock, R. P., Zhang, Y., Durlin, Q., Li, J. & Meng, F., Jan 1 2019, Infrared Technology and Applications XLV. Andresen, B. F., Fulop, G. F. & Hanson, C. M. (eds.). SPIE, 110020G. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 11002).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Organic Chemicals
Epitaxy
Superlattices
Chemical Vapor Deposition
Organic chemicals

Extended short wavelength infrared heterojunction phototransistors based on type II superlattices

Dehzangi, A., McClintock, R. P., Wu, D., Haddadi, A., Chevallier, R. & Razeghi, M., May 13 2019, In : Applied Physics Letters. 114, 19, 191109.

Research output: Contribution to journalArticle

phototransistors
superlattices
heterojunctions
dark current
wavelengths

Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD

Park, J. H., McClintock, R. P. & Razeghi, M., Jul 5 2019, In : Semiconductor Science and Technology. 34, 8, 08LT01.

Research output: Contribution to journalArticle

Aluminum Oxide
Metallorganic chemical vapor deposition
MOSFET devices
Sapphire
metal oxide semiconductors
1 Citation (Scopus)

High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate

Robin, Y., Ding, K., Demir, I., McClintock, R. P., Elagoz, S. & Razeghi, M., Feb 1 2019, In : Materials Science in Semiconductor Processing. 90, p. 87-91 5 p.

Research output: Contribution to journalArticle

Silicon
ultraviolet radiation
Light emitting diodes
Luminance
brightness
Photodetectors
Leakage currents
photometers
leakage
Infrared radiation