Ryan P McClintock

  • 2352 Citations

Research output per year

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Personal profile

Education/Academic qualification

PhD, Northwestern University

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  • Research Output

    Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers

    Razeghi, M., Dehzangi, A., Wu, D., McClintock, R. P., Zhang, Y., Durlin, Q., Li, J. & Meng, F., Jan 1 2019, Infrared Technology and Applications XLV. Andresen, B. F., Fulop, G. F. & Hanson, C. M. (eds.). SPIE, 110020G. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 11002).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2 Scopus citations

    Extended short wavelength infrared heterojunction phototransistors based on type II superlattices

    Dehzangi, A., McClintock, R. P., Wu, D., Haddadi, A., Chevallier, R. & Razeghi, M., May 13 2019, In : Applied Physics Letters. 114, 19, 191109.

    Research output: Contribution to journalArticle

  • 3 Scopus citations

    Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD

    Park, J. H., McClintock, R. P. & Razeghi, M., Jul 5 2019, In : Semiconductor Science and Technology. 34, 8, 08LT01.

    Research output: Contribution to journalArticle

  • 1 Scopus citations

    High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate

    Robin, Y., Ding, K., Demir, I., McClintock, R., Elagoz, S. & Razeghi, M., Feb 2019, In : Materials Science in Semiconductor Processing. 90, p. 87-91 5 p.

    Research output: Contribution to journalArticle

  • 2 Scopus citations

    High speed antimony-based superlattice photodetectors transferred on sapphire

    Dehzangi, A., McClintock, R., Wu, D., Li, J., Johnson, S. M., Dial, E. & Razeghi, M., Jan 1 2019, In : Applied Physics Express. 12, 11, 116502.

    Research output: Contribution to journalArticle

    Open Access
  • 1 Scopus citations