In this project, we plan to develop a new type of two-terminal magnetic memory device, referred to as anti-ferromagnetic voltage-controlled memory (AVM). By combining a new state variable for data storage (Néel vector in a metallic antiferromagnet, rather than the magnetization vector of a ferromagnet in conventional magnetic memories) with a new mechanism for writing of information (electric-field-induced switching, rather than current-induced switching by spin-transfer or spin-orbit torque), AVM is expected to provide 100× faster and more power-efficient switching than existing ferromagnetic memory devices.
|Effective start/end date||5/15/19 → 4/30/22|
- National Science Foundation (ECCS-1853879)
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