Development of Heavy Element Wide Band Gap Semiconductors

Project: Research project

Project Details


Dr. Wenwen Lin will be involved in exploration of new heavy atom chalcogenide/halide family and lithium containing semiconductors for the purpose of room temperature γ-radiation and neutron detection. The project aims to accelerate nuclear detector material discovery and development through innovative materials design/selection, synthesis, crystal growth and characterization.

The project involves two classes of materials, one with a hybrid system that derives from a combination of metal chalcogenides and metal halides and the other with Li-6 containing semiconductors. To generate and select new materials with the energy band gap (1.6 < Eg < 2.4 eV) required for detector applications, the design principle of creating mixed lattices by binary compounds will be used. After multi-step material process for synthesis and purification, large crystals (> 1 cm3) will be grown by Bridgman method and characterized by the spectroscopic, charge transport, and photocurrent measurements.
Effective start/end date6/1/1812/31/19


  • UChicago Argonne, LLC, Argonne National Laboratory (8J-30009-0002C)
  • Department of Energy (8J-30009-0002C)


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