Fundamental Study of p-Type Doping in MOCVD-Grown Ga2O3

Project: Research project

Project Details


This proposal is for a 3-year comprehensive study of the p-doping of Ga2O3 layers to be carried out by a team of three Co-PIs with extensive experience growing, doping, and characterizing wide-bandgap oxides. Under an EAGER grant from the National Science Foundation they have spent the last two years extensively studying Ga2O3 material and devices. This team has developed Ga2O3 on sapphire substrates via MOCVD and have some very exciting preliminary p-type doping results. This proposal will build on that existing work and systematically study the doping of the Ga2O3 at a fundamental physical level to determine the necessary growth parameters for optimal crystal growth, optimal doping, and to definitively determine the conduction mechanisms. We will then use that material to develop device structures such as high power transistors and magnetic tunnel junction memory devices. The core elements of this project are: (1) development of a fundamental understanding of the MOCVD growth of Ga2O3; (2) Demonstrating and understanding the p-type doping mechanism of this wide bandgap material; (3) Using the doping and hetero-interface engineering to realize high performance transistors and magnetic tunnel junctions as proof of p-type doping. Ga2O3 based transistors are anticipated to yield a further 10x improvement over the already impressive performance of III-nitride-based devices--an unprecedented level of performance in applications that require high total continuous power and efficiency as well as excellent linearity and performance at reduced power levels. There is also a growing demand for fast and low power memory and logic devices, driven by the emergence of applications in artificial intelligence and autonomous systems. p-type Ga2O3 is ideally suited for the realization of magnetic tunnel junction devices that may usher in a new generation of distributed low power memory that will revolutionize existing computer architectures and performance.
Effective start/end date9/15/199/14/22


  • Air Force Office of Scientific Research (FA9550-19-1-0410)


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