For the past decade, due to their superlative properties and ease of isolation using micromechanical exfoliation, two-dimensional (2D) materials have attracted significant interest for fundamental studies and prototype device development. In particular, chemically inert 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have attracted the most attention since they can be processed in ambient conditions with minimal further precautions. However, the family of 2D materials has hundreds of additional members that have been largely unexplored due to their high chemical reactivities that introduce challenges in preparing and handling samples for testing and device prototyping. Building off recent results generated through NSF Award DMR-1505849 on the processing and encapsulation of chemically reactive 2D black phosphorus and InSe, this renewal proposal will develop methodologies for probing the electronic properties of the even more chemically reactive 2D metal halides. The proposed experimental studies will allow identification of the most promising 2D metal halides for electronic and quantum applications including computationally predicted semiconducting band gaps below 2 eV, low charge carrier effective masses (and thus potentially high charge carrier mobilities), spintronic and magnetically ordered states, and half-metallicity.
|Effective start/end date||7/1/20 → 6/30/23|
- National Science Foundation (DMR-2004420)
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