Room temperature high-power terahertz semiconductor laser with high-quality beam shape and stable spectral emission

This proposal addresses critical needs of high-power THz semiconductor lasers with high-quality beam shape and stable spectral emission at room temperature. The proposed THz frequency sources based on DFG in OPA QCL has numerous applications in fundamental researches, as well as in industrial applications including non-destructive imaging, gas spectroscopy, and wireless communications. The aim is to create a high average power, spectrally stable THz semiconductor lasers with high-quality beam shape at room temperature in continuous-wave (CW) operation. This will be the first room temperature chip-based semiconductor laser with > 10 mW CW THz output power, and will have a great impact on the fundamental optics, materials, and may also bring a revolution in the development of future THz technology with broad-ranging application prospects.