Scalable Three Terminal Memory Devices based on Silicon-Compatible Antiferromagnetic Materials

Project: Research project

Project Details

Description

In this project, we propose to develop the first three-terminal nanoscale antiferromagnetic memory devices with full electrical read and write capability, based on siliconcompatible antiferromagnetic materials.
StatusActive
Effective start/end date6/1/225/31/25

Funding

  • National Science Foundation (ECCS-2203243)

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