Abstract
Postgrowth annealing effects on a heteroepitaxial MnAs thin film grown on a GaAs(001) substrate have been investigated. The Β-MnAs phase domains of an as-grown sample, observed as dark stripes in the surface topography at room temperature, disappear completely after postgrowth annealing. In support of this finding, the paramagnetic contribution to the magnetic hysteresis loop arising from the Β-MnAs phase domains is also not observed at 300 K. We attribute the origin of these effects to relaxation of the elastic strain in the MnAs thin film.
Original language | English (US) |
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Article number | 092504 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 9 |
DOIs | |
State | Published - Aug 29 2005 |
Funding
Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant No. F49620-01-1-0428, NSF Grant Nos. ECS-0224210 and DMR 0244711, and the Post-doctoral Fellowship Program of Korea Science & Engineering Foundation (KOSEF); use was made of the facilities operated by the Northwestern MERSEC supported by the National Science Foundation.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)