β -phase-domain-free α-MnAs thin films on GaAs(001) by postgrowth annealing

J. H. Song; Y. Cui; J. J. Lee; J. B. Ketterson

doi:10.1063/1.2035316

β -phase-domain-free α-MnAs thin films on GaAs(001) by postgrowth annealing

J. H. Song, Y. Cui, J. J. Lee, J. B. Ketterson

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Postgrowth annealing effects on a heteroepitaxial MnAs thin film grown on a GaAs(001) substrate have been investigated. The Β-MnAs phase domains of an as-grown sample, observed as dark stripes in the surface topography at room temperature, disappear completely after postgrowth annealing. In support of this finding, the paramagnetic contribution to the magnetic hysteresis loop arising from the Β-MnAs phase domains is also not observed at 300 K. We attribute the origin of these effects to relaxation of the elastic strain in the MnAs thin film.

Original language	English (US)
Article number	092504
Journal	Applied Physics Letters
Volume	87
Issue number	9
DOIs	https://doi.org/10.1063/1.2035316
State	Published - Aug 29 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2035316

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title = "β -phase-domain-free α-MnAs thin films on GaAs(001) by postgrowth annealing",

abstract = "Postgrowth annealing effects on a heteroepitaxial MnAs thin film grown on a GaAs(001) substrate have been investigated. The Β-MnAs phase domains of an as-grown sample, observed as dark stripes in the surface topography at room temperature, disappear completely after postgrowth annealing. In support of this finding, the paramagnetic contribution to the magnetic hysteresis loop arising from the Β-MnAs phase domains is also not observed at 300 K. We attribute the origin of these effects to relaxation of the elastic strain in the MnAs thin film.",

author = "Song, {J. H.} and Y. Cui and Lee, {J. J.} and Ketterson, {J. B.}",

note = "Funding Information: Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant No. F49620-01-1-0428, NSF Grant Nos. ECS-0224210 and DMR 0244711, and the Post-doctoral Fellowship Program of Korea Science & Engineering Foundation (KOSEF); use was made of the facilities operated by the Northwestern MERSEC supported by the National Science Foundation. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2005",

month = aug,

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doi = "10.1063/1.2035316",

language = "English (US)",

volume = "87",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - β -phase-domain-free α-MnAs thin films on GaAs(001) by postgrowth annealing

AU - Song, J. H.

AU - Cui, Y.

AU - Lee, J. J.

AU - Ketterson, J. B.

N1 - Funding Information: Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant No. F49620-01-1-0428, NSF Grant Nos. ECS-0224210 and DMR 0244711, and the Post-doctoral Fellowship Program of Korea Science & Engineering Foundation (KOSEF); use was made of the facilities operated by the Northwestern MERSEC supported by the National Science Foundation. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2005/8/29

Y1 - 2005/8/29

N2 - Postgrowth annealing effects on a heteroepitaxial MnAs thin film grown on a GaAs(001) substrate have been investigated. The Β-MnAs phase domains of an as-grown sample, observed as dark stripes in the surface topography at room temperature, disappear completely after postgrowth annealing. In support of this finding, the paramagnetic contribution to the magnetic hysteresis loop arising from the Β-MnAs phase domains is also not observed at 300 K. We attribute the origin of these effects to relaxation of the elastic strain in the MnAs thin film.

AB - Postgrowth annealing effects on a heteroepitaxial MnAs thin film grown on a GaAs(001) substrate have been investigated. The Β-MnAs phase domains of an as-grown sample, observed as dark stripes in the surface topography at room temperature, disappear completely after postgrowth annealing. In support of this finding, the paramagnetic contribution to the magnetic hysteresis loop arising from the Β-MnAs phase domains is also not observed at 300 K. We attribute the origin of these effects to relaxation of the elastic strain in the MnAs thin film.

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ER -

β -phase-domain-free α-MnAs thin films on GaAs(001) by postgrowth annealing

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