Abstract
Postgrowth annealing effects on a heteroepitaxial MnAs thin film grown on a GaAs(001) substrate have been investigated. The Β-MnAs phase domains of an as-grown sample, observed as dark stripes in the surface topography at room temperature, disappear completely after postgrowth annealing. In support of this finding, the paramagnetic contribution to the magnetic hysteresis loop arising from the Β-MnAs phase domains is also not observed at 300 K. We attribute the origin of these effects to relaxation of the elastic strain in the MnAs thin film.
| Original language | English (US) |
|---|---|
| Article number | 092504 |
| Journal | Applied Physics Letters |
| Volume | 87 |
| Issue number | 9 |
| DOIs | |
| State | Published - Aug 29 2005 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Song, J. H., Cui, Y., Lee, J. J., & Ketterson, J. B. (2005). β -phase-domain-free α-MnAs thin films on GaAs(001) by postgrowth annealing. Applied Physics Letters, 87(9), [092504]. https://doi.org/10.1063/1.2035316