1.2-1.6 μm GaxIn1-xAsyP1-y-InP DH lasers grown by LPMOCVD

M. Razeghi*, B. de Crémoux, J. P. Duchemin

*Corresponding author for this work

Research output: Contribution to journalArticle

37 Scopus citations

Abstract

Room temperature pulse operation and continuous wave (CW) operation in the 1.2-1.6 μm region have been achieved in GaInAsP-InP DH lasers fabricated on material grown by LPMOCVD. Threshold currents density as low as 430 A/cm2 (cavity length of 950 μm) have been measured for devices emitting at 1.3 μm. Threshold current densities of 1060 A/cm2 (cavity length of 400 μm) have been obtained for devices emitting at 1.55 μm, with active layer thicknesses of 0.22 μm. Values of T0 between 60 and 70 K have been obtained. Fundamental transverse mode oscillation has been achieved (for CW operation) up to an output power of 10 mW. The preliminary results on the aging test are most encouraging and demonstrate that the LPMOCVD lasers emitting at 1.2-1.6 μm have comparable degradation rates to those of LPE lasers suggesting the LPMOCVD technique is promising for large scale production of laser diodes.

Original languageEnglish (US)
Pages (from-to)389-397
Number of pages9
JournalJournal of Crystal Growth
Volume68
Issue number1
DOIs
StatePublished - Sep 1 1984

ASJC Scopus subject areas

  • Condensed Matter Physics

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