1.3 μm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Zhichuan Niu*, Shiyong Zhang, Haiqiao Ni, Donghai Wu, Zhenhong He, Zheng Sun, Qin Han, Ronghan Wu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

High structural and optical quality 1.3 μm GaInNAs /GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In 0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellösung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs.

Original languageEnglish (US)
Pages (from-to)631-634
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume3
Issue number3
DOIs
StatePublished - May 8 2006
Event32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany
Duration: Sep 18 2005Sep 22 2005

ASJC Scopus subject areas

  • Condensed Matter Physics

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