TY - JOUR
T1 - 1.3 μm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
AU - Niu, Zhichuan
AU - Zhang, Shiyong
AU - Ni, Haiqiao
AU - Wu, Donghai
AU - He, Zhenhong
AU - Sun, Zheng
AU - Han, Qin
AU - Wu, Ronghan
PY - 2006
Y1 - 2006
N2 - High structural and optical quality 1.3 μm GaInNAs /GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In 0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellösung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs.
AB - High structural and optical quality 1.3 μm GaInNAs /GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In 0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellösung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs.
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U2 - 10.1002/pssc.200564103
DO - 10.1002/pssc.200564103
M3 - Conference article
AN - SCOPUS:33646174849
SN - 1610-1634
VL - 3
SP - 631
EP - 634
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
IS - 3
T2 - 32nd International Symposium on Compound Semiconductors, ISCS-2005
Y2 - 18 September 2005 through 22 September 2005
ER -