Abstract
The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots (QDs) by molecular beam epitaxy (MBE) is investigated, and a QD laser diode lasing at 1.33 μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence (PL) spectra at room temperature is less than 35meV for most of the multi-layer QD samples, revealing good, reproducible MBE growth conditions. Moreover, atomic force microscopy images show that the QD surface density can be controlled in the range from 1 × 1010 to 7 × 1010 cm-2. The best PL properties are obtained at a QD surface density of about 4 × 1010 cm-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.
Original language | English (US) |
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Pages (from-to) | 482-488 |
Number of pages | 7 |
Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
Volume | 27 |
Issue number | 3 |
State | Published - Mar 2006 |
Keywords
- InAs
- Laser diode
- Quantum dot
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry