1.3 μm InGaAs/InAs/GaAs self-assembled quantum dot laser diode grown by molecular beam epitaxy

Zhichuan Niu; Haiqiao Ni; Zhidan Fang; Zheng Gong; Shiyong Zhang; Donghai Wu; Zheng Sun; Huan Zhao; Hongling Peng; Qin Han; Ronghan Wu

1.3 μm InGaAs/InAs/GaAs self-assembled quantum dot laser diode grown by molecular beam epitaxy

Zhichuan Niu^*, Haiqiao Ni, Zhidan Fang, Zheng Gong, Shiyong Zhang, Donghai Wu, Zheng Sun, Huan Zhao, Hongling Peng, Qin Han, Ronghan Wu

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots (QDs) by molecular beam epitaxy (MBE) is investigated, and a QD laser diode lasing at 1.33 μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence (PL) spectra at room temperature is less than 35meV for most of the multi-layer QD samples, revealing good, reproducible MBE growth conditions. Moreover, atomic force microscopy images show that the QD surface density can be controlled in the range from 1 × 10¹⁰ to 7 × 10¹⁰ cm^-2. The best PL properties are obtained at a QD surface density of about 4 × 10¹⁰ cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

Original language	English (US)
Pages (from-to)	482-488
Number of pages	7
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	27
Issue number	3
State	Published - Mar 2006

Keywords

InAs
Laser diode
Quantum dot

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{1dd254021d434d5aada4ac89c9dd04e3,

title = "1.3 μm InGaAs/InAs/GaAs self-assembled quantum dot laser diode grown by molecular beam epitaxy",

abstract = "The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots (QDs) by molecular beam epitaxy (MBE) is investigated, and a QD laser diode lasing at 1.33 μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence (PL) spectra at room temperature is less than 35meV for most of the multi-layer QD samples, revealing good, reproducible MBE growth conditions. Moreover, atomic force microscopy images show that the QD surface density can be controlled in the range from 1 × 1010 to 7 × 1010 cm-2. The best PL properties are obtained at a QD surface density of about 4 × 1010 cm-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.",

keywords = "InAs, Laser diode, Quantum dot",

author = "Zhichuan Niu and Haiqiao Ni and Zhidan Fang and Zheng Gong and Shiyong Zhang and Donghai Wu and Zheng Sun and Huan Zhao and Hongling Peng and Qin Han and Ronghan Wu",

year = "2006",

month = mar,

language = "English (US)",

volume = "27",

pages = "482--488",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "3",

}

TY - JOUR

T1 - 1.3 μm InGaAs/InAs/GaAs self-assembled quantum dot laser diode grown by molecular beam epitaxy

AU - Niu, Zhichuan

AU - Ni, Haiqiao

AU - Fang, Zhidan

AU - Gong, Zheng

AU - Zhang, Shiyong

AU - Wu, Donghai

AU - Sun, Zheng

AU - Zhao, Huan

AU - Peng, Hongling

AU - Han, Qin

AU - Wu, Ronghan

PY - 2006/3

Y1 - 2006/3

N2 - The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots (QDs) by molecular beam epitaxy (MBE) is investigated, and a QD laser diode lasing at 1.33 μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence (PL) spectra at room temperature is less than 35meV for most of the multi-layer QD samples, revealing good, reproducible MBE growth conditions. Moreover, atomic force microscopy images show that the QD surface density can be controlled in the range from 1 × 1010 to 7 × 1010 cm-2. The best PL properties are obtained at a QD surface density of about 4 × 1010 cm-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

AB - The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots (QDs) by molecular beam epitaxy (MBE) is investigated, and a QD laser diode lasing at 1.33 μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence (PL) spectra at room temperature is less than 35meV for most of the multi-layer QD samples, revealing good, reproducible MBE growth conditions. Moreover, atomic force microscopy images show that the QD surface density can be controlled in the range from 1 × 1010 to 7 × 1010 cm-2. The best PL properties are obtained at a QD surface density of about 4 × 1010 cm-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

KW - InAs

KW - Laser diode

KW - Quantum dot

UR - http://www.scopus.com/inward/record.url?scp=33745137099&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745137099&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33745137099

VL - 27

SP - 482

EP - 488

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

SN - 0253-4177

IS - 3

ER -

1.3 μm InGaAs/InAs/GaAs self-assembled quantum dot laser diode grown by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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