1.3 μm InGaAs/InAs/GaAs self-assembled quantum dot laser diode grown by molecular beam epitaxy

Zhichuan Niu*, Haiqiao Ni, Zhidan Fang, Zheng Gong, Shiyong Zhang, Donghai Wu, Zheng Sun, Huan Zhao, Hongling Peng, Qin Han, Ronghan Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots (QDs) by molecular beam epitaxy (MBE) is investigated, and a QD laser diode lasing at 1.33 μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence (PL) spectra at room temperature is less than 35meV for most of the multi-layer QD samples, revealing good, reproducible MBE growth conditions. Moreover, atomic force microscopy images show that the QD surface density can be controlled in the range from 1 × 1010 to 7 × 1010 cm-2. The best PL properties are obtained at a QD surface density of about 4 × 1010 cm-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

Original languageEnglish (US)
Pages (from-to)482-488
Number of pages7
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume27
Issue number3
StatePublished - Mar 1 2006

Keywords

  • InAs
  • Laser diode
  • Quantum dot

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Niu, Z., Ni, H., Fang, Z., Gong, Z., Zhang, S., Wu, D., Sun, Z., Zhao, H., Peng, H., Han, Q., & Wu, R. (2006). 1.3 μm InGaAs/InAs/GaAs self-assembled quantum dot laser diode grown by molecular beam epitaxy. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 27(3), 482-488.