Abstract
Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method to fabricate the InGaAs/InAlGaAs microdisk laser structure is discussed. The lasers with 20 μm in diameter lase with single mode at 1.5-μm wavelength when optically pumped with pulsed Argon-ion laser at 80 K.
Original language | English (US) |
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Pages (from-to) | 1353-1355 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 5 |
Issue number | 12 |
DOIs | |
State | Published - Dec 1993 |
Funding
Manuscript received July 14, 1993. This work was supported by the National Science Foundation under Contracts ECS-9210434 and DMR-9120521.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering