1.5-μm InGaAs/InAlGaAs Quantum-Well Microdisk Lasers

D. Y. Chu; Z. Xu; S. T. Ho; M. K. Chin; N. J. Sauer; T. Y. Chang

doi:10.1109/68.262538

1.5-μm InGaAs/InAlGaAs Quantum-Well Microdisk Lasers

D. Y. Chu, Z. Xu, S. T. Ho, M. K. Chin, N. J. Sauer, T. Y. Chang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method to fabricate the InGaAs/InAlGaAs microdisk laser structure is discussed. The lasers with 20 μm in diameter lase with single mode at 1.5-μm wavelength when optically pumped with pulsed Argon-ion laser at 80 K.

Original language	English (US)
Pages (from-to)	1353-1355
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	5
Issue number	12
DOIs	https://doi.org/10.1109/68.262538
State	Published - Dec 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.262538

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@article{7edd75e164614fceabd041c10da81e0b,

title = "1.5-μm InGaAs/InAlGaAs Quantum-Well Microdisk Lasers",

abstract = "Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method to fabricate the InGaAs/InAlGaAs microdisk laser structure is discussed. The lasers with 20 μm in diameter lase with single mode at 1.5-μm wavelength when optically pumped with pulsed Argon-ion laser at 80 K.",

author = "Chu, {D. Y.} and Z. Xu and Ho, {S. T.} and Chin, {M. K.} and Sauer, {N. J.} and Chang, {T. Y.}",

note = "Funding Information: Manuscript received July 14, 1993. This work was supported by the National Science Foundation under Contracts ECS-9210434 and DMR-9120521.",

year = "1993",

month = dec,

doi = "10.1109/68.262538",

language = "English (US)",

volume = "5",

pages = "1353--1355",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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TY - JOUR

T1 - 1.5-μm InGaAs/InAlGaAs Quantum-Well Microdisk Lasers

AU - Chu, D. Y.

AU - Xu, Z.

AU - Ho, S. T.

AU - Chin, M. K.

AU - Sauer, N. J.

AU - Chang, T. Y.

N1 - Funding Information: Manuscript received July 14, 1993. This work was supported by the National Science Foundation under Contracts ECS-9210434 and DMR-9120521.

PY - 1993/12

Y1 - 1993/12

N2 - Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method to fabricate the InGaAs/InAlGaAs microdisk laser structure is discussed. The lasers with 20 μm in diameter lase with single mode at 1.5-μm wavelength when optically pumped with pulsed Argon-ion laser at 80 K.

AB - Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method to fabricate the InGaAs/InAlGaAs microdisk laser structure is discussed. The lasers with 20 μm in diameter lase with single mode at 1.5-μm wavelength when optically pumped with pulsed Argon-ion laser at 80 K.

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U2 - 10.1109/68.262538

DO - 10.1109/68.262538

M3 - Article

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EP - 1355

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 12

ER -

1.5-μm InGaAs/InAlGaAs Quantum-Well Microdisk Lasers

Abstract

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