1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVD

M. Razeghi; P. Hirtz; J. P. Larivain; R. Blondeau; B. de Cremoux; J. P. Duchemin

doi:10.1049/el:19810451

1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVD

M. Razeghi, P. Hirtz, J. P. Larivain, R. Blondeau, B. de Cremoux, J. P. Duchemin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The letter reports the first successful room-temperature pulsed operation of a broad-area contact laser of GaInAsP/InP double heterostructure, grown by LP MOCVD, emitting at 1.5 μm. Pulsed thresholds as low as 2.5 kA/cm² have been obtained for 1.5 μm, for an active layer thickness of 0.48 μm. This is equal to a current density per micrometre of 5.2 kA cm⁻² μm⁻¹. In_x Ga_1-x AS_yP_1-y, III, III, V, V alloys are of great interest for use in infra-red devices. They can be grown lattice matched on InP over a wide range of compositions. The resulting bandgap (1.35-0.75 eV) covers a spectral range which contains the region of lowest losses and lowest dispersion in modern optical fibres. This property makes In_1-xGa_xAs_yP_1-y, very attractive as a semiconductor laser and detector material for future fibre communication systems.

Original language	English (US)
Pages (from-to)	643-644
Number of pages	2
Journal	Electronics Letters
Volume	17
Issue number	18
DOIs	https://doi.org/10.1049/el:19810451
State	Published - Sep 3 1981

Keywords

Epitaxy
Lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19810451

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title = "1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVD",

abstract = "The letter reports the first successful room-temperature pulsed operation of a broad-area contact laser of GaInAsP/InP double heterostructure, grown by LP MOCVD, emitting at 1.5 μm. Pulsed thresholds as low as 2.5 kA/cm2 have been obtained for 1.5 μm, for an active layer thickness of 0.48 μm. This is equal to a current density per micrometre of 5.2 kA cm−2 μm−1. Inx Ga1-x ASyP1-y, III, III, V, V alloys are of great interest for use in infra-red devices. They can be grown lattice matched on InP over a wide range of compositions. The resulting bandgap (1.35-0.75 eV) covers a spectral range which contains the region of lowest losses and lowest dispersion in modern optical fibres. This property makes In1-xGaxAsyP1-y, very attractive as a semiconductor laser and detector material for future fibre communication systems.",

keywords = "Epitaxy, Lasers",

author = "M. Razeghi and P. Hirtz and Larivain, {J. P.} and R. Blondeau and {de Cremoux}, B. and Duchemin, {J. P.}",

year = "1981",

month = sep,

day = "3",

doi = "10.1049/el:19810451",

language = "English (US)",

volume = "17",

pages = "643--644",

journal = "Electronics Letters",

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T1 - 1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVD

AU - Razeghi, M.

AU - Hirtz, P.

AU - Larivain, J. P.

AU - Blondeau, R.

AU - de Cremoux, B.

AU - Duchemin, J. P.

PY - 1981/9/3

Y1 - 1981/9/3

N2 - The letter reports the first successful room-temperature pulsed operation of a broad-area contact laser of GaInAsP/InP double heterostructure, grown by LP MOCVD, emitting at 1.5 μm. Pulsed thresholds as low as 2.5 kA/cm2 have been obtained for 1.5 μm, for an active layer thickness of 0.48 μm. This is equal to a current density per micrometre of 5.2 kA cm−2 μm−1. Inx Ga1-x ASyP1-y, III, III, V, V alloys are of great interest for use in infra-red devices. They can be grown lattice matched on InP over a wide range of compositions. The resulting bandgap (1.35-0.75 eV) covers a spectral range which contains the region of lowest losses and lowest dispersion in modern optical fibres. This property makes In1-xGaxAsyP1-y, very attractive as a semiconductor laser and detector material for future fibre communication systems.

AB - The letter reports the first successful room-temperature pulsed operation of a broad-area contact laser of GaInAsP/InP double heterostructure, grown by LP MOCVD, emitting at 1.5 μm. Pulsed thresholds as low as 2.5 kA/cm2 have been obtained for 1.5 μm, for an active layer thickness of 0.48 μm. This is equal to a current density per micrometre of 5.2 kA cm−2 μm−1. Inx Ga1-x ASyP1-y, III, III, V, V alloys are of great interest for use in infra-red devices. They can be grown lattice matched on InP over a wide range of compositions. The resulting bandgap (1.35-0.75 eV) covers a spectral range which contains the region of lowest losses and lowest dispersion in modern optical fibres. This property makes In1-xGaxAsyP1-y, very attractive as a semiconductor laser and detector material for future fibre communication systems.

KW - Epitaxy

KW - Lasers

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DO - 10.1049/el:19810451

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EP - 644

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 18

ER -

1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVD

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Keywords

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