1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVD

M. Razeghi, P. Hirtz, J. P. Larivain, R. Blondeau, B. de Cremoux, J. P. Duchemin

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The letter reports the first successful room-temperature pulsed operation of a broad-area contact laser of GaInAsP/InP double heterostructure, grown by LP MOCVD, emitting at 1.5 μm. Pulsed thresholds as low as 2.5 kA/cm2 have been obtained for 1.5 μm, for an active layer thickness of 0.48 μm. This is equal to a current density per micrometre of 5.2 kA cm−2 μm−1. Inx Ga1-x ASyP1-y, III, III, V, V alloys are of great interest for use in infra-red devices. They can be grown lattice matched on InP over a wide range of compositions. The resulting bandgap (1.35-0.75 eV) covers a spectral range which contains the region of lowest losses and lowest dispersion in modern optical fibres. This property makes In1-xGaxAsyP1-y, very attractive as a semiconductor laser and detector material for future fibre communication systems.

Original languageEnglish (US)
Pages (from-to)643-644
Number of pages2
JournalElectronics Letters
Volume17
Issue number18
DOIs
StatePublished - Sep 3 1981

Keywords

  • Epitaxy
  • Lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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