1.55µm bh-dfb lasers grown by lp‑mocvd

P. Correc; J. Landreau; J. C. Bouley; M. Razeghi; R. Blondeau; K. Kazmierski; M. Krakowski; B. De Cremoux; J. P. Duchemin

doi:10.1117/12.951192

1.55µm bh-dfb lasers grown by lp‑mocvd

P. Correc, J. Landreau, J. C. Bouley, M. Razeghi, R. Blondeau, K. Kazmierski, M. Krakowski, B. De Cremoux, J. P. Duchemin

Electrical and Computer Engineering

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Abstract

We describe in this paper the design and characteristics of buried heterostructure (BH) distributed feedback (DFB) lasers grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Typically, threshold current is 30mA for 240µm-long lasers with two cleaved facets and 40mA for lasers with one facet anti-reflection coated. Experimental values are in good agreement with theoretical predictions, based on the laser structure and the coupling coefficient of the diffraction grating. Single longitudinal mode operation is observed for temperatures up to 70⁰C and output powers up to 6mW. The mode rejection ratio between the DFB mode and the strongest side mode is greater than 30dB.

Original language	English (US)
Pages (from-to)	2-7
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	587
DOIs	https://doi.org/10.1117/12.951192
State	Published - Jul 9 1986

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "1.55µm bh-dfb lasers grown by lp‑mocvd",

abstract = "We describe in this paper the design and characteristics of buried heterostructure (BH) distributed feedback (DFB) lasers grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Typically, threshold current is 30mA for 240µm-long lasers with two cleaved facets and 40mA for lasers with one facet anti-reflection coated. Experimental values are in good agreement with theoretical predictions, based on the laser structure and the coupling coefficient of the diffraction grating. Single longitudinal mode operation is observed for temperatures up to 70⁰C and output powers up to 6mW. The mode rejection ratio between the DFB mode and the strongest side mode is greater than 30dB.",

author = "P. Correc and J. Landreau and Bouley, {J. C.} and M. Razeghi and R. Blondeau and K. Kazmierski and M. Krakowski and {De Cremoux}, B. and Duchemin, {J. P.}",

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T1 - 1.55µm bh-dfb lasers grown by lp‑mocvd

AU - Correc, P.

AU - Landreau, J.

AU - Bouley, J. C.

AU - Razeghi, M.

AU - Blondeau, R.

AU - Kazmierski, K.

AU - Krakowski, M.

AU - De Cremoux, B.

AU - Duchemin, J. P.

PY - 1986/7/9

Y1 - 1986/7/9

N2 - We describe in this paper the design and characteristics of buried heterostructure (BH) distributed feedback (DFB) lasers grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Typically, threshold current is 30mA for 240µm-long lasers with two cleaved facets and 40mA for lasers with one facet anti-reflection coated. Experimental values are in good agreement with theoretical predictions, based on the laser structure and the coupling coefficient of the diffraction grating. Single longitudinal mode operation is observed for temperatures up to 70⁰C and output powers up to 6mW. The mode rejection ratio between the DFB mode and the strongest side mode is greater than 30dB.

AB - We describe in this paper the design and characteristics of buried heterostructure (BH) distributed feedback (DFB) lasers grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Typically, threshold current is 30mA for 240µm-long lasers with two cleaved facets and 40mA for lasers with one facet anti-reflection coated. Experimental values are in good agreement with theoretical predictions, based on the laser structure and the coupling coefficient of the diffraction grating. Single longitudinal mode operation is observed for temperatures up to 70⁰C and output powers up to 6mW. The mode rejection ratio between the DFB mode and the strongest side mode is greater than 30dB.

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1.55µm bh-dfb lasers grown by lp‑mocvd

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