1.55µm bh-dfb lasers grown by lp‑mocvd

P. Correc, J. Landreau, J. C. Bouley, M. Razeghi, R. Blondeau, K. Kazmierski, M. Krakowski, B. De Cremoux, J. P. Duchemin

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We describe in this paper the design and characteristics of buried heterostructure (BH) distributed feedback (DFB) lasers grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Typically, threshold current is 30mA for 240µm-long lasers with two cleaved facets and 40mA for lasers with one facet anti-reflection coated. Experimental values are in good agreement with theoretical predictions, based on the laser structure and the coupling coefficient of the diffraction grating. Single longitudinal mode operation is observed for temperatures up to 70⁰C and output powers up to 6mW. The mode rejection ratio between the DFB mode and the strongest side mode is greater than 30dB.

Original languageEnglish (US)
Pages (from-to)2-7
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Jul 9 1986

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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