We demonstrate the 1.58 μm emission at room temperature from a metamorphic In0.6 Ga0.4 As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32 Ga0.68 As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 μ m2 broad area laser, a minimum threshold current density of 490 A cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 μm GaAs-based lasers.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)