1.58 μm InGaAs quantum well laser on GaAs

I. T̊ngring; H. Q. Ni; B. P. Wu; Donghai Wu; Y. H. Xiong; S. S. Huang; Z. C. Niu; S. M. Wang; Z. H. Lai; A. Larsson

doi:10.1063/1.2803756

1.58 μm InGaAs quantum well laser on GaAs

I. T̊ngring^*, H. Q. Ni, B. P. Wu, Donghai Wu, Y. H. Xiong, S. S. Huang, Z. C. Niu, S. M. Wang, Z. H. Lai, A. Larsson

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

We demonstrate the 1.58 μm emission at room temperature from a metamorphic In0.6 Ga0.4 As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32 Ga0.68 As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 μ m2 broad area laser, a minimum threshold current density of 490 A cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 μm GaAs-based lasers.

Original language	English (US)
Article number	221101
Journal	Applied Physics Letters
Volume	91
Issue number	22
DOIs	https://doi.org/10.1063/1.2803756
State	Published - 2007

Funding

Both the Swedish Research Council (VR) and the Swedish International Development Cooperation Agency (Sida) are acknowledged for financial support for this project.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2803756

Cite this

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title = "1.58 μm InGaAs quantum well laser on GaAs",

abstract = "We demonstrate the 1.58 μm emission at room temperature from a metamorphic In0.6 Ga0.4 As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32 Ga0.68 As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 μ m2 broad area laser, a minimum threshold current density of 490 A cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 μm GaAs-based lasers.",

author = "I. T̊ngring and Ni, {H. Q.} and Wu, {B. P.} and Donghai Wu and Xiong, {Y. H.} and Huang, {S. S.} and Niu, {Z. C.} and Wang, {S. M.} and Lai, {Z. H.} and A. Larsson",

note = "Funding Information: Both the Swedish Research Council (VR) and the Swedish International Development Cooperation Agency (Sida) are acknowledged for financial support for this project.",

year = "2007",

doi = "10.1063/1.2803756",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - 1.58 μm InGaAs quantum well laser on GaAs

AU - T̊ngring, I.

AU - Ni, H. Q.

AU - Wu, B. P.

AU - Wu, Donghai

AU - Xiong, Y. H.

AU - Huang, S. S.

AU - Niu, Z. C.

AU - Wang, S. M.

AU - Lai, Z. H.

AU - Larsson, A.

N1 - Funding Information: Both the Swedish Research Council (VR) and the Swedish International Development Cooperation Agency (Sida) are acknowledged for financial support for this project.

PY - 2007

Y1 - 2007

N2 - We demonstrate the 1.58 μm emission at room temperature from a metamorphic In0.6 Ga0.4 As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32 Ga0.68 As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 μ m2 broad area laser, a minimum threshold current density of 490 A cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 μm GaAs-based lasers.

AB - We demonstrate the 1.58 μm emission at room temperature from a metamorphic In0.6 Ga0.4 As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32 Ga0.68 As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 μ m2 broad area laser, a minimum threshold current density of 490 A cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 μm GaAs-based lasers.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221101

ER -

1.58 μm InGaAs quantum well laser on GaAs

Abstract

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