1.58 μm InGaAs quantum well laser on GaAs

I. T̊ngring*, H. Q. Ni, B. P. Wu, Donghai Wu, Y. H. Xiong, S. S. Huang, Z. C. Niu, S. M. Wang, Z. H. Lai, A. Larsson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

We demonstrate the 1.58 μm emission at room temperature from a metamorphic In0.6 Ga0.4 As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32 Ga0.68 As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 μ m2 broad area laser, a minimum threshold current density of 490 A cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 μm GaAs-based lasers.

Original languageEnglish (US)
Article number221101
JournalApplied Physics Letters
Volume91
Issue number22
DOIs
StatePublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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