1f noise of SnO2 nanowire transistors

Sanghyun Ju; Pochiang Chen; Chongwu Zhou; Young Geun Ha; Antonio Facchetti; Tobin J. Marks; Sun Kook Kim; Saeed Mohammadi; David B. Janes

doi:10.1063/1.2947586

1f noise of SnO₂ nanowire transistors

Sanghyun Ju, Pochiang Chen, Chongwu Zhou, Young Geun Ha, Antonio Facchetti, Tobin J. Marks, Sun Kook Kim, Saeed Mohammadi, David B. Janes

Chemistry

Research output: Contribution to journal › Article

45 Scopus citations

Abstract

The low frequency (1f) noise in single SnO₂ nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (S_I) is found to be proportional to I_d² in the transistor operating regime. The extracted Hooge's constants (α_H) are 4.5×10 ^-2 at V_ds=0.1 V and 5.1×10^-2 at V _ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.

Original language	English (US)
Article number	243120
Journal	Applied Physics Letters
Volume	92
Issue number	24
DOIs	https://doi.org/10.1063/1.2947586
State	Published - Jun 30 2008

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Ju, S., Chen, P., Zhou, C., Ha, Y. G., Facchetti, A., Marks, T. J., Kim, S. K., Mohammadi, S., & Janes, D. B. (2008). 1f noise of SnO₂ nanowire transistors. Applied Physics Letters, 92(24), [243120]. https://doi.org/10.1063/1.2947586

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abstract = "The low frequency (1f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (SI) is found to be proportional to Id2 in the transistor operating regime. The extracted Hooge's constants (αH) are 4.5×10 -2 at Vds=0.1 V and 5.1×10-2 at V ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.",

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AU - Kim, Sun Kook

AU - Mohammadi, Saeed

AU - Janes, David B.

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10.1063/1.2947586