1f noise of SnO2 nanowire transistors

Sanghyun Ju, Pochiang Chen, Chongwu Zhou, Young Geun Ha, Antonio Facchetti, Tobin J. Marks, Sun Kook Kim, Saeed Mohammadi, David B. Janes

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Abstract

The low frequency (1f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (SI) is found to be proportional to Id2 in the transistor operating regime. The extracted Hooge's constants (αH) are 4.5×10 -2 at Vds=0.1 V and 5.1×10-2 at V ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.

Original languageEnglish (US)
Article number243120
JournalApplied Physics Letters
Volume92
Issue number24
DOIs
StatePublished - Jun 30 2008

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ju, S., Chen, P., Zhou, C., Ha, Y. G., Facchetti, A., Marks, T. J., Kim, S. K., Mohammadi, S., & Janes, D. B. (2008). 1f noise of SnO2 nanowire transistors. Applied Physics Letters, 92(24), [243120]. https://doi.org/10.1063/1.2947586