Abstract
The low frequency (1f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (SI) is found to be proportional to Id2 in the transistor operating regime. The extracted Hooge's constants (αH) are 4.5×10 -2 at Vds=0.1 V and 5.1×10-2 at V ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.
Original language | English (US) |
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Article number | 243120 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 24 |
DOIs | |
State | Published - 2008 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)