1f noise of SnO2 nanowire transistors

Sanghyun Ju; Pochiang Chen; Chongwu Zhou; Young Geun Ha; Antonio Facchetti; Tobin J. Marks; Sun Kook Kim; Saeed Mohammadi; David B. Janes

doi:10.1063/1.2947586

1f noise of SnO₂ nanowire transistors

Sanghyun Ju, Pochiang Chen, Chongwu Zhou, Young Geun Ha, Antonio Facchetti, Tobin J. Marks, Sun Kook Kim, Saeed Mohammadi, David B. Janes

Chemistry

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52 Scopus citations

Abstract

The low frequency (1f) noise in single SnO₂ nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (S_I) is found to be proportional to I_d² in the transistor operating regime. The extracted Hooge's constants (α_H) are 4.5×10 ^-2 at V_ds=0.1 V and 5.1×10^-2 at V _ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.

Original language	English (US)
Article number	243120
Journal	Applied Physics Letters
Volume	92
Issue number	24
DOIs	https://doi.org/10.1063/1.2947586
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "1f noise of SnO2 nanowire transistors",

abstract = "The low frequency (1f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (SI) is found to be proportional to Id2 in the transistor operating regime. The extracted Hooge's constants (αH) are 4.5×10 -2 at Vds=0.1 V and 5.1×10-2 at V ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.",

author = "Sanghyun Ju and Pochiang Chen and Chongwu Zhou and Ha, {Young Geun} and Antonio Facchetti and Marks, {Tobin J.} and Kim, {Sun Kook} and Saeed Mohammadi and Janes, {David B.}",

note = "Funding Information: This work was supported in part by the NASA Institute for Nanoelectronics and Computing (NCC 2-1363) and by the National Science Foundation under NIRT Grant No. ECE-0506802.",

year = "2008",

doi = "10.1063/1.2947586",

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volume = "92",

journal = "Applied Physics Letters",

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T1 - 1f noise of SnO2 nanowire transistors

AU - Ju, Sanghyun

AU - Chen, Pochiang

AU - Zhou, Chongwu

AU - Ha, Young Geun

AU - Facchetti, Antonio

AU - Marks, Tobin J.

AU - Kim, Sun Kook

AU - Mohammadi, Saeed

AU - Janes, David B.

N1 - Funding Information: This work was supported in part by the NASA Institute for Nanoelectronics and Computing (NCC 2-1363) and by the National Science Foundation under NIRT Grant No. ECE-0506802.

PY - 2008

Y1 - 2008

N2 - The low frequency (1f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (SI) is found to be proportional to Id2 in the transistor operating regime. The extracted Hooge's constants (αH) are 4.5×10 -2 at Vds=0.1 V and 5.1×10-2 at V ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.

AB - The low frequency (1f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (SI) is found to be proportional to Id2 in the transistor operating regime. The extracted Hooge's constants (αH) are 4.5×10 -2 at Vds=0.1 V and 5.1×10-2 at V ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.

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1f noise of SnO₂ nanowire transistors

Abstract

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