280 nm UV LEDs grown on HVPE GaN substrates

A. Yasan; R. McClintock; K. Mayes; S. R. Darvish; P. Kung; M. Razeghi; R. J. Molnar

280 nm UV LEDs grown on HVPE GaN substrates

A. Yasan^*, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, M. Razeghi, R. J. Molnar

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We report on the enhancement of optical and electrical properties of 280 nm UV LEDs using low dislocation density HVPE-grown GaN substrate. Compared with the same structure grown on sapphire, these LEDs show ∼30% reduction in current-voltage differential resistance, ∼15% reduction in turn-on voltage, more than 200% increase in output power slope efficiency and saturation at higher currents. Lower density of defects due to higher material quality and better heat dissipation are believed to be the reason behind these improvements.

Original language	English (US)
Pages (from-to)	287-289
Number of pages	3
Journal	Opto-electronics Review
Volume	10
Issue number	4
State	Published - 2002

Keywords

GaN LEDs
HVPE growth

ASJC Scopus subject areas

Radiation
General Materials Science
Electrical and Electronic Engineering

Cite this

@article{529b2ba1f379450d8fff9d8b5ccd4fbc,

title = "280 nm UV LEDs grown on HVPE GaN substrates",

abstract = "We report on the enhancement of optical and electrical properties of 280 nm UV LEDs using low dislocation density HVPE-grown GaN substrate. Compared with the same structure grown on sapphire, these LEDs show ∼30% reduction in current-voltage differential resistance, ∼15% reduction in turn-on voltage, more than 200% increase in output power slope efficiency and saturation at higher currents. Lower density of defects due to higher material quality and better heat dissipation are believed to be the reason behind these improvements.",

keywords = "GaN LEDs, HVPE growth",

author = "A. Yasan and R. McClintock and K. Mayes and Darvish, {S. R.} and P. Kung and M. Razeghi and Molnar, {R. J.}",

year = "2002",

language = "English (US)",

volume = "10",

pages = "287--289",

journal = "Opto-electronics Review",

issn = "1230-3402",

publisher = "Elsevier B.V.",

number = "4",

}

TY - JOUR

T1 - 280 nm UV LEDs grown on HVPE GaN substrates

AU - Yasan, A.

AU - McClintock, R.

AU - Mayes, K.

AU - Darvish, S. R.

AU - Kung, P.

AU - Razeghi, M.

AU - Molnar, R. J.

PY - 2002

Y1 - 2002

N2 - We report on the enhancement of optical and electrical properties of 280 nm UV LEDs using low dislocation density HVPE-grown GaN substrate. Compared with the same structure grown on sapphire, these LEDs show ∼30% reduction in current-voltage differential resistance, ∼15% reduction in turn-on voltage, more than 200% increase in output power slope efficiency and saturation at higher currents. Lower density of defects due to higher material quality and better heat dissipation are believed to be the reason behind these improvements.

AB - We report on the enhancement of optical and electrical properties of 280 nm UV LEDs using low dislocation density HVPE-grown GaN substrate. Compared with the same structure grown on sapphire, these LEDs show ∼30% reduction in current-voltage differential resistance, ∼15% reduction in turn-on voltage, more than 200% increase in output power slope efficiency and saturation at higher currents. Lower density of defects due to higher material quality and better heat dissipation are believed to be the reason behind these improvements.

KW - GaN LEDs

KW - HVPE growth

UR - http://www.scopus.com/inward/record.url?scp=0345794020&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345794020&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0345794020

SN - 1230-3402

VL - 10

SP - 287

EP - 289

JO - Opto-electronics Review

JF - Opto-electronics Review

IS - 4

ER -

280 nm UV LEDs grown on HVPE GaN substrates

Abstract

Keywords

ASJC Scopus subject areas

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