280 nm UV LEDs grown on HVPE GaN substrates

A. Yasan*, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, M. Razeghi, R. J. Molnar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


We report on the enhancement of optical and electrical properties of 280 nm UV LEDs using low dislocation density HVPE-grown GaN substrate. Compared with the same structure grown on sapphire, these LEDs show ∼30% reduction in current-voltage differential resistance, ∼15% reduction in turn-on voltage, more than 200% increase in output power slope efficiency and saturation at higher currents. Lower density of defects due to higher material quality and better heat dissipation are believed to be the reason behind these improvements.

Original languageEnglish (US)
Pages (from-to)287-289
Number of pages3
JournalOpto-electronics Review
Issue number4
StatePublished - 2002


  • GaN LEDs
  • HVPE growth

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Electrical and Electronic Engineering


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