Here we describe an approach, called transfer printing, to allow the combination of broad classes of materials into three-dimensional (3-D) heterogeneously integrated electronic devices. The process involves fabrication of source wafers that contain high performance single crystal devices from materials including, but not limited to, silicon, gallium arsenide and gallium nitride. These devices are then delineated and transferred to a target substrate using an elastomeric stamp. The transferred devices are then interconnected to underlying circuitry and the process is repeated to build up a 3-D stack. This talk will describe the transfer printing, process and will discuss examples of 3-D heterogeneous circuits that have been fabricated. The merits and challenges of transfer printing will be discussed, along with a description of ideal applications for transfer printing of high performance electronics.