@inproceedings{f70546ba93ff4f0692c4fc1a3ff0b698,
title = "320×256 infrared focal plane array based on type II InAs/GaSb superlattice with a 12 μm cutoff wavelength",
abstract = "In the past few years, significant progress has been made in the structure design, growth and processing of Type-II InAs/GaSb superlattice photodetectors. Type-II superlattice demonstrated its ability to perform imaging in the middle and long infra-red range, becoming a potential competitor for technologies such as QWIP and HgCdTe. Using an empirical tight-binding model, we developed a superlattice design that matches the lattice parameter of GaSb substrates and presents a cutoff wavelength of 12 urn. Electrical and optical measurements performed on single element detectors at 77 K showed an R0A averaging 13 Ω.cm 2 and a quantum efficiency as high as 54%. We demonstrated high quality material growth with x-ray FWHM below 30 arcsec and an AFM rms roughness of 1.5 {\AA} over an area of 20×20 μm 2. A 320×256 array of 25×25μm 2 pixels, hybridized to an Indigo Read Out Integrated Circuit, performed thermal imaging up to 185 K with an operability close to 97%. The noise equivalent temperature difference at 81 K presented a peak at 270 mK, corresponding to a mean value of 340 mK.",
keywords = "Focal plane array, GaSb, InAs, Infrared, LWIR, Type-II",
author = "Delaunay, {Pierre Yves} and Nguyen, {Binh Minh} and Darin Hoffman and Manijeh Razeghi",
year = "2007",
doi = "10.1117/12.723832",
language = "English (US)",
isbn = "0819466646",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
number = "I",
booktitle = "Infrared Technology and Applications XXXIII",
edition = "I",
note = "Infrared Technology and Applications XXXIII ; Conference date: 09-04-2007 Through 13-04-2007",
}