3D Ferrimagnetic Device for Multi-Bit Storage and Efficient In-Memory Computing

Zhizhong Zhang, Zhenyi Zheng, Yue Zhang, Jinyi Sun, Kelian Lin, Kun Zhang, Xueqiang Feng, Lei Chen, Jinkai Wang, Guanda Wang, Yinchang Du, Youguang Zhang, Arnaud Bournel, Pedram Khalili Amiri, Weisheng Zhao

Research output: Contribution to journalArticlepeer-review

Abstract

In this letter, we propose a 3D spintronic device stacked by ferrimagnetic (FIM) alloy CoTb layers with a thickness gradient for realizing multi-bit storage and efficient in-memory computing (IMC). Firstly, spin-orbit torque (SOT) induced multi-level magnetization switching of a Pt/CoTb/W/CoTb/Pt stack is experimentally achieved and micromagnetically modeled. Furthermore, a 3D-FIM IMC device with multiple ferrimagnetic layers is constructed and analyzed. Its functionalities of ultra-dense storage and reconfigurable logic are both validated through micromagnetic studies. Due to the ultra-fast dynamics near the compensation point, this 3D-FIM IMC device can operate with ultra-low energy consumption (18 aJ) and ultra-high speed (25 ps).

Original languageEnglish (US)
Article number9309002
Pages (from-to)152-155
Number of pages4
JournalIEEE Electron Device Letters
Volume42
Issue number2
DOIs
StatePublished - Feb 2021

Keywords

  • Ferrimagnet
  • in-memory computing
  • multi-bit
  • reconfigurable logic
  • three-dimension

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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