3D Ferrimagnetic Device for Multi-Bit Storage and Efficient In-Memory Computing

Zhizhong Zhang, Zhenyi Zheng, Yue Zhang*, Jinyi Sun, Kelian Lin, Kun Zhang, Xueqiang Feng, Lei Chen, Jinkai Wang, Guanda Wang, Yinchang Du, Youguang Zhang, Arnaud Bournel, Pedram Khalili Amiri, Weisheng Zhao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this letter, we propose a 3D spintronic device stacked by ferrimagnetic (FIM) alloy CoTb layers with a thickness gradient for realizing multi-bit storage and efficient in-memory computing (IMC). Firstly, spin-orbit torque (SOT) induced multi-level magnetization switching of a Pt/CoTb/W/CoTb/Pt stack is experimentally achieved and micromagnetically modeled. Furthermore, a 3D-FIM IMC device with multiple ferrimagnetic layers is constructed and analyzed. Its functionalities of ultra-dense storage and reconfigurable logic are both validated through micromagnetic studies. Due to the ultra-fast dynamics near the compensation point, this 3D-FIM IMC device can operate with ultra-low energy consumption (18 aJ) and ultra-high speed (25 ps).

Original languageEnglish (US)
Article number9309002
Pages (from-to)152-155
Number of pages4
JournalIEEE Electron Device Letters
Volume42
Issue number2
DOIs
StatePublished - Feb 2021

Keywords

  • Ferrimagnet
  • in-memory computing
  • multi-bit
  • reconfigurable logic
  • three-dimension

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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