4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung, M. Razegh

Research output: Contribution to journalArticle

139 Scopus citations

Abstract

The output power of a AlGaN-based single quantum well ultraviolet light-emitting diodes (LED) at wavelength 278 to 360 nm was discussed. Standard photolithography and dry etching techniques were used to build the device. The quantum efficiency of the LEDs was also studied in both the pulse and continuous wave modes. The results show that these devices have a high optical power of 4.5 mW in pulsed operation mode and 165 μW in continuous-wave (cw) mode.

Original languageEnglish (US)
Pages (from-to)4701-4703
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number23
DOIs
StatePublished - Dec 8 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Yasan, A., McClintock, R., Mayes, K., Shiell, D., Gautero, L., Darvish, S. R., Kung, P., & Razegh, M. (2003). 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes. Applied Physics Letters, 83(23), 4701-4703. https://doi.org/10.1063/1.1633019