4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

A. Yasan; R. McClintock; K. Mayes; D. Shiell; L. Gautero; S. R. Darvish; P. Kung; M. Razegh

doi:10.1063/1.1633019

4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung, M. Razegh

Research output: Contribution to journal › Article › peer-review

147 Scopus citations

Abstract

The output power of a AlGaN-based single quantum well ultraviolet light-emitting diodes (LED) at wavelength 278 to 360 nm was discussed. Standard photolithography and dry etching techniques were used to build the device. The quantum efficiency of the LEDs was also studied in both the pulse and continuous wave modes. The results show that these devices have a high optical power of 4.5 mW in pulsed operation mode and 165 μW in continuous-wave (cw) mode.

Original language	English (US)
Pages (from-to)	4701-4703
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	23
DOIs	https://doi.org/10.1063/1.1633019
State	Published - Dec 8 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1633019

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@article{62e6152a115b47428795351be18fd899,

title = "4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes",

abstract = "The output power of a AlGaN-based single quantum well ultraviolet light-emitting diodes (LED) at wavelength 278 to 360 nm was discussed. Standard photolithography and dry etching techniques were used to build the device. The quantum efficiency of the LEDs was also studied in both the pulse and continuous wave modes. The results show that these devices have a high optical power of 4.5 mW in pulsed operation mode and 165 μW in continuous-wave (cw) mode.",

author = "A. Yasan and R. McClintock and K. Mayes and D. Shiell and L. Gautero and Darvish, {S. R.} and P. Kung and M. Razegh",

year = "2003",

month = dec,

day = "8",

doi = "10.1063/1.1633019",

language = "English (US)",

volume = "83",

pages = "4701--4703",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

AU - Yasan, A.

AU - McClintock, R.

AU - Mayes, K.

AU - Shiell, D.

AU - Gautero, L.

AU - Darvish, S. R.

AU - Kung, P.

AU - Razegh, M.

PY - 2003/12/8

Y1 - 2003/12/8

N2 - The output power of a AlGaN-based single quantum well ultraviolet light-emitting diodes (LED) at wavelength 278 to 360 nm was discussed. Standard photolithography and dry etching techniques were used to build the device. The quantum efficiency of the LEDs was also studied in both the pulse and continuous wave modes. The results show that these devices have a high optical power of 4.5 mW in pulsed operation mode and 165 μW in continuous-wave (cw) mode.

AB - The output power of a AlGaN-based single quantum well ultraviolet light-emitting diodes (LED) at wavelength 278 to 360 nm was discussed. Standard photolithography and dry etching techniques were used to build the device. The quantum efficiency of the LEDs was also studied in both the pulse and continuous wave modes. The results show that these devices have a high optical power of 4.5 mW in pulsed operation mode and 165 μW in continuous-wave (cw) mode.

UR - http://www.scopus.com/inward/record.url?scp=0348197114&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0348197114&partnerID=8YFLogxK

U2 - 10.1063/1.1633019

DO - 10.1063/1.1633019

M3 - Article

AN - SCOPUS:0348197114

SN - 0003-6951

VL - 83

SP - 4701

EP - 4703

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

Abstract

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