Future datacom and telecom applications as well as optical interconnects require high bandwidth, low-power, small area optical modulator devices , , , , . No device technology to date has been shown with -The concomitant properties of high electro-optic (EO) bandwidth, wide optical range, low power consumption, and compact size. We have taken an alternative approach of developing thin film BaTiO3 as an optoelectronic material platform for high frequency, low operation voltage, and compact modulators. The BaTiO3 thin film platform has competitive advantages over o-Ther legacy platforms for optical modulator applications. In brief, ferroelectric oxide thin film BaTiO3 modulators have advantages of: (1) large EO coefficient, more than ten times higher compared to those of LiNbO3 devices currently dominating optical modulator markets; (2) low driving voltage of <1.5 V, thus low power consumption; (3) bandwidth >50 GHz demonstrated with potential reaching 100 + GHz regime; (4) potential for medium scale integration; and (5) integration with Si electronics leading to ultrahigh compact electrooptical components at low cost . Using BaTiO3 thin films with 1 mm long interaction length, we have demonstrated optical modulators with voltage-length products nearly an order of magnitude smaller than that of silicon . We have also shown -The potential for high frequency operation by demonstrating modulation out to 50 GHz , , .