50 GHz electro-optic modulators with BaTiO3 epitaxial thin film platform for short distance optical communications

Zhifu Liu, Peter Girouard, Pice Chen, Young Kyu Jeong, Seng-Tiong Ho, Bruce W Wessels

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Future datacom and telecom applications as well as optical interconnects require high bandwidth, low-power, small area optical modulator devices [1], [2], [3], [4], [5]. No device technology to date has been shown with -The concomitant properties of high electro-optic (EO) bandwidth, wide optical range, low power consumption, and compact size. We have taken an alternative approach of developing thin film BaTiO3 as an optoelectronic material platform for high frequency, low operation voltage, and compact modulators. The BaTiO3 thin film platform has competitive advantages over o-Ther legacy platforms for optical modulator applications. In brief, ferroelectric oxide thin film BaTiO3 modulators have advantages of: (1) large EO coefficient, more than ten times higher compared to those of LiNbO3 devices currently dominating optical modulator markets; (2) low driving voltage of <1.5 V, thus low power consumption; (3) bandwidth >50 GHz demonstrated with potential reaching 100 + GHz regime; (4) potential for medium scale integration; and (5) integration with Si electronics leading to ultrahigh compact electrooptical components at low cost [6]. Using BaTiO3 thin films with 1 mm long interaction length, we have demonstrated optical modulators with voltage-length products nearly an order of magnitude smaller than that of silicon [7]. We have also shown -The potential for high frequency operation by demonstrating modulation out to 50 GHz [7], [8], [9].

Original languageEnglish (US)
Title of host publication2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
Volume2018-January
ISBN (Electronic)9781538632901
DOIs
StatePublished - Jan 3 2018
Event5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Berkeley, United States
Duration: Oct 19 2017Oct 20 2017

Other

Other5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017
CountryUnited States
CityBerkeley
Period10/19/1710/20/17

Fingerprint

Light modulators
Epitaxial films
Optical communication
Electrooptical effects
Modulators
Thin films
Electric potential
Bandwidth
Optical interconnects
Silicon
Optoelectronic devices
Oxide films
Ferroelectric materials
Electric power utilization
Electronic equipment
Modulation
Costs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Liu, Z., Girouard, P., Chen, P., Jeong, Y. K., Ho, S-T., & Wessels, B. W. (2018). 50 GHz electro-optic modulators with BaTiO3 epitaxial thin film platform for short distance optical communications. In 2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings (Vol. 2018-January, pp. 1-3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/E3S.2017.8246181
Liu, Zhifu ; Girouard, Peter ; Chen, Pice ; Jeong, Young Kyu ; Ho, Seng-Tiong ; Wessels, Bruce W. / 50 GHz electro-optic modulators with BaTiO3 epitaxial thin film platform for short distance optical communications. 2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings. Vol. 2018-January Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-3
@inproceedings{72d100a41ff74fb3a0212ad764d0a4d3,
title = "50 GHz electro-optic modulators with BaTiO3 epitaxial thin film platform for short distance optical communications",
abstract = "Future datacom and telecom applications as well as optical interconnects require high bandwidth, low-power, small area optical modulator devices [1], [2], [3], [4], [5]. No device technology to date has been shown with -The concomitant properties of high electro-optic (EO) bandwidth, wide optical range, low power consumption, and compact size. We have taken an alternative approach of developing thin film BaTiO3 as an optoelectronic material platform for high frequency, low operation voltage, and compact modulators. The BaTiO3 thin film platform has competitive advantages over o-Ther legacy platforms for optical modulator applications. In brief, ferroelectric oxide thin film BaTiO3 modulators have advantages of: (1) large EO coefficient, more than ten times higher compared to those of LiNbO3 devices currently dominating optical modulator markets; (2) low driving voltage of <1.5 V, thus low power consumption; (3) bandwidth >50 GHz demonstrated with potential reaching 100 + GHz regime; (4) potential for medium scale integration; and (5) integration with Si electronics leading to ultrahigh compact electrooptical components at low cost [6]. Using BaTiO3 thin films with 1 mm long interaction length, we have demonstrated optical modulators with voltage-length products nearly an order of magnitude smaller than that of silicon [7]. We have also shown -The potential for high frequency operation by demonstrating modulation out to 50 GHz [7], [8], [9].",
author = "Zhifu Liu and Peter Girouard and Pice Chen and Jeong, {Young Kyu} and Seng-Tiong Ho and Wessels, {Bruce W}",
year = "2018",
month = "1",
day = "3",
doi = "10.1109/E3S.2017.8246181",
language = "English (US)",
volume = "2018-January",
pages = "1--3",
booktitle = "2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Liu, Z, Girouard, P, Chen, P, Jeong, YK, Ho, S-T & Wessels, BW 2018, 50 GHz electro-optic modulators with BaTiO3 epitaxial thin film platform for short distance optical communications. in 2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings. vol. 2018-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017, Berkeley, United States, 10/19/17. https://doi.org/10.1109/E3S.2017.8246181

50 GHz electro-optic modulators with BaTiO3 epitaxial thin film platform for short distance optical communications. / Liu, Zhifu; Girouard, Peter; Chen, Pice; Jeong, Young Kyu; Ho, Seng-Tiong; Wessels, Bruce W.

2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings. Vol. 2018-January Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-3.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - 50 GHz electro-optic modulators with BaTiO3 epitaxial thin film platform for short distance optical communications

AU - Liu, Zhifu

AU - Girouard, Peter

AU - Chen, Pice

AU - Jeong, Young Kyu

AU - Ho, Seng-Tiong

AU - Wessels, Bruce W

PY - 2018/1/3

Y1 - 2018/1/3

N2 - Future datacom and telecom applications as well as optical interconnects require high bandwidth, low-power, small area optical modulator devices [1], [2], [3], [4], [5]. No device technology to date has been shown with -The concomitant properties of high electro-optic (EO) bandwidth, wide optical range, low power consumption, and compact size. We have taken an alternative approach of developing thin film BaTiO3 as an optoelectronic material platform for high frequency, low operation voltage, and compact modulators. The BaTiO3 thin film platform has competitive advantages over o-Ther legacy platforms for optical modulator applications. In brief, ferroelectric oxide thin film BaTiO3 modulators have advantages of: (1) large EO coefficient, more than ten times higher compared to those of LiNbO3 devices currently dominating optical modulator markets; (2) low driving voltage of <1.5 V, thus low power consumption; (3) bandwidth >50 GHz demonstrated with potential reaching 100 + GHz regime; (4) potential for medium scale integration; and (5) integration with Si electronics leading to ultrahigh compact electrooptical components at low cost [6]. Using BaTiO3 thin films with 1 mm long interaction length, we have demonstrated optical modulators with voltage-length products nearly an order of magnitude smaller than that of silicon [7]. We have also shown -The potential for high frequency operation by demonstrating modulation out to 50 GHz [7], [8], [9].

AB - Future datacom and telecom applications as well as optical interconnects require high bandwidth, low-power, small area optical modulator devices [1], [2], [3], [4], [5]. No device technology to date has been shown with -The concomitant properties of high electro-optic (EO) bandwidth, wide optical range, low power consumption, and compact size. We have taken an alternative approach of developing thin film BaTiO3 as an optoelectronic material platform for high frequency, low operation voltage, and compact modulators. The BaTiO3 thin film platform has competitive advantages over o-Ther legacy platforms for optical modulator applications. In brief, ferroelectric oxide thin film BaTiO3 modulators have advantages of: (1) large EO coefficient, more than ten times higher compared to those of LiNbO3 devices currently dominating optical modulator markets; (2) low driving voltage of <1.5 V, thus low power consumption; (3) bandwidth >50 GHz demonstrated with potential reaching 100 + GHz regime; (4) potential for medium scale integration; and (5) integration with Si electronics leading to ultrahigh compact electrooptical components at low cost [6]. Using BaTiO3 thin films with 1 mm long interaction length, we have demonstrated optical modulators with voltage-length products nearly an order of magnitude smaller than that of silicon [7]. We have also shown -The potential for high frequency operation by demonstrating modulation out to 50 GHz [7], [8], [9].

UR - http://www.scopus.com/inward/record.url?scp=85045977923&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85045977923&partnerID=8YFLogxK

U2 - 10.1109/E3S.2017.8246181

DO - 10.1109/E3S.2017.8246181

M3 - Conference contribution

VL - 2018-January

SP - 1

EP - 3

BT - 2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Liu Z, Girouard P, Chen P, Jeong YK, Ho S-T, Wessels BW. 50 GHz electro-optic modulators with BaTiO3 epitaxial thin film platform for short distance optical communications. In 2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings. Vol. 2018-January. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-3 https://doi.org/10.1109/E3S.2017.8246181