8-13 μm InAsSb heterojunction photodiode operating at near room temperature

J. D. Kim*, S. Kim, D. Wu, J. Wojkowski, J. Xu, J. Piotrowski, E. Bigan, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

68 Scopus citations

Abstract

p+-InSb/π-InAs1-xSbx/n+-InSb heterojunction photodiodes operating at near room temperature in the 8-13 μm region of infrared (IR) spectrum are reported. A room-temperature photovoltaic response of up to 13 μm has been observed at 300 K with an x≈0.85 sample. The voltage responsivity-area product of 3×10-5 V cm 2/W has been obtained at 300 K for the λ=10.6 μm optimized device. This was close to the theoretical limit set by the Auger mechanism, with a detectivity at room temperature of ≈1.5×108 cm Hz 1/2/W.

Original languageEnglish (US)
Pages (from-to)2645
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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