8-13 μm InAsSb heterojunction photodiode operating at near room temperature

J. D. Kim; S. Kim; D. Wu; J. Wojkowski; J. Xu; J. Piotrowski; E. Bigan; M. Razeghi

doi:10.1063/1.114323

8-13 μm InAsSb heterojunction photodiode operating at near room temperature

J. D. Kim^*, S. Kim, D. Wu, J. Wojkowski, J. Xu, J. Piotrowski, E. Bigan, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

p⁺-InSb/π-InAs_1-xSb_x/n⁺-InSb heterojunction photodiodes operating at near room temperature in the 8-13 μm region of infrared (IR) spectrum are reported. A room-temperature photovoltaic response of up to 13 μm has been observed at 300 K with an x≈0.85 sample. The voltage responsivity-area product of 3×10^-5 V cm ²/W has been obtained at 300 K for the λ=10.6 μm optimized device. This was close to the theoretical limit set by the Auger mechanism, with a detectivity at room temperature of ≈1.5×10⁸ cm Hz ^1/2/W.

Original language	English (US)
Pages (from-to)	2645
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114323
State	Published - 1995

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@article{27b3b9ef2d8947b48d8226a4543c9326,

title = "8-13 μm InAsSb heterojunction photodiode operating at near room temperature",

abstract = "p+-InSb/π-InAs1-xSbx/n+-InSb heterojunction photodiodes operating at near room temperature in the 8-13 μm region of infrared (IR) spectrum are reported. A room-temperature photovoltaic response of up to 13 μm has been observed at 300 K with an x≈0.85 sample. The voltage responsivity-area product of 3×10-5 V cm 2/W has been obtained at 300 K for the λ=10.6 μm optimized device. This was close to the theoretical limit set by the Auger mechanism, with a detectivity at room temperature of ≈1.5×108 cm Hz 1/2/W.",

author = "Kim, {J. D.} and S. Kim and D. Wu and J. Wojkowski and J. Xu and J. Piotrowski and E. Bigan and M. Razeghi",

year = "1995",

doi = "10.1063/1.114323",

language = "English (US)",

volume = "67",

pages = "2645",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - 8-13 μm InAsSb heterojunction photodiode operating at near room temperature

AU - Kim, J. D.

AU - Kim, S.

AU - Wu, D.

AU - Wojkowski, J.

AU - Xu, J.

AU - Piotrowski, J.

AU - Bigan, E.

AU - Razeghi, M.

PY - 1995

Y1 - 1995

N2 - p+-InSb/π-InAs1-xSbx/n+-InSb heterojunction photodiodes operating at near room temperature in the 8-13 μm region of infrared (IR) spectrum are reported. A room-temperature photovoltaic response of up to 13 μm has been observed at 300 K with an x≈0.85 sample. The voltage responsivity-area product of 3×10-5 V cm 2/W has been obtained at 300 K for the λ=10.6 μm optimized device. This was close to the theoretical limit set by the Auger mechanism, with a detectivity at room temperature of ≈1.5×108 cm Hz 1/2/W.

AB - p+-InSb/π-InAs1-xSbx/n+-InSb heterojunction photodiodes operating at near room temperature in the 8-13 μm region of infrared (IR) spectrum are reported. A room-temperature photovoltaic response of up to 13 μm has been observed at 300 K with an x≈0.85 sample. The voltage responsivity-area product of 3×10-5 V cm 2/W has been obtained at 300 K for the λ=10.6 μm optimized device. This was close to the theoretical limit set by the Auger mechanism, with a detectivity at room temperature of ≈1.5×108 cm Hz 1/2/W.

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U2 - 10.1063/1.114323

DO - 10.1063/1.114323

M3 - Article

AN - SCOPUS:0029387351

SN - 0003-6951

VL - 67

SP - 2645

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

8-13 μm InAsSb heterojunction photodiode operating at near room temperature

Abstract

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