80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

L. Nougaret; H. Happy; G. Dambrine; V. Derycke; J. P. Bourgoin; A. A. Green; M. C. Hersam

doi:10.1063/1.3155212

80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

L. Nougaret, H. Happy^*, G. Dambrine, V. Derycke, J. P. Bourgoin, A. A. Green, M. C. Hersam

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

170 Scopus citations

Abstract

This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.

Original language	English (US)
Article number	243505
Journal	Applied Physics Letters
Volume	94
Issue number	24
DOIs	https://doi.org/10.1063/1.3155212
State	Published - 2009

Funding

The authors thank N. Chimot for his help with nanotubes deposition. This work was partially supported by the ANR project HF-CNT under the contract number ANR-05–NANO-055.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3155212

Cite this

@article{b3d65e3665cb4a2f8fd4ce0ea40624af,

title = "80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes",

abstract = "This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.",

author = "L. Nougaret and H. Happy and G. Dambrine and V. Derycke and Bourgoin, {J. P.} and Green, {A. A.} and Hersam, {M. C.}",

note = "Funding Information: The authors thank N. Chimot for his help with nanotubes deposition. This work was partially supported by the ANR project HF-CNT under the contract number ANR-05–NANO-055.",

year = "2009",

doi = "10.1063/1.3155212",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - 80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

AU - Nougaret, L.

AU - Happy, H.

AU - Dambrine, G.

AU - Derycke, V.

AU - Bourgoin, J. P.

AU - Green, A. A.

AU - Hersam, M. C.

N1 - Funding Information: The authors thank N. Chimot for his help with nanotubes deposition. This work was partially supported by the ANR project HF-CNT under the contract number ANR-05–NANO-055.

PY - 2009

Y1 - 2009

N2 - This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.

AB - This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.

UR - http://www.scopus.com/inward/record.url?scp=67649214239&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649214239&partnerID=8YFLogxK

U2 - 10.1063/1.3155212

DO - 10.1063/1.3155212

M3 - Article

AN - SCOPUS:67649214239

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243505

ER -

80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

Abstract

Funding

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this