8.5 μm room temperature quantum cascade lasers grown by gas-source molecular beam epitaxy

Steven Boyd Slivken*, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

We report room-temperature pulsed-mode operation of 8.5 μm quantum cascade lasers grown by gas-source molecular beam epitaxy. The theory necessary to understand the operation of the laser is presented and current problems are analyzed. Very good agreement is shown to exist between theoretical and experimental emission wavelengths. The high-temperature operation is achieved with 1 μs pulses at a repetition rate of 200 Hz. Peak output power in these conditions is in excess of 700 mW per 2 facets at 79 K and 25 mW at 300 K. Threshold current as a function of temperature shows an exponential dependence (∼ exp(T/T0)) with T0=188 K for a 1.5 mm cavity.

Original languageEnglish (US)
Pages (from-to)314-321
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3278
DOIs
StatePublished - Dec 1 1998
EventIntegrated Optics Devices II - San Jose, CA, United States
Duration: Jan 28 1998Jan 30 1998

Keywords

  • Intersubband Laser
  • Room Temperature
  • Semiconductor Laser

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Fingerprint Dive into the research topics of '8.5 μm room temperature quantum cascade lasers grown by gas-source molecular beam epitaxy'. Together they form a unique fingerprint.

  • Cite this