A 3D EHL simulation of CMP: Theoretical framework of modeling

Xiaoqing Jin*, Leon M Keer, Q Jane Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


The extensive application of chemical mechanical polishing (CMP) in the semiconductor industry requires an understanding of the fundamental mechanisms involved. This paper integrates a group of mechanical models to give a framework for CMP modeling: a mixed three-dimensional (3D) soft elastohydrodynamic lubrication (EHL) model with asperity contact considered. The soft-pad mechanics, asperity-contact analysis, and slurry film description are three major components of this framework. Based on the results of a thin-layer contact analysis, the Winkler foundation model is selected to evaluate the pad deformation in bulk. By applying the macro-micro approach, the macroscopic view of the average fluid film thickness (average clearance) is related to microasperity contact. When CMP is implemented in a mixed lubrication regime, the soft polishing pad usually undergoes a displacement of the same scale as the slurry film, which may change the lubrication boundary considerably. Considering this effect, a modified Reynolds equation is derived, and a stronger coupling is found in the global force and moment balances. Finally, an effective iterative scheme is proposed and modeling results examined.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Issue number1
StatePublished - Feb 7 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


Dive into the research topics of 'A 3D EHL simulation of CMP: Theoretical framework of modeling'. Together they form a unique fingerprint.

Cite this