Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2008|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)