A 500 MHz carbon nanotube transistor oscillator

A. A. Pesetski, J. E. Baumgardner, S. V. Krishnaswamy, H. Zhang, J. D. Adam, C. Kocabas, T. Banks, J. A. Rogers

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz.

Original languageEnglish (US)
Article number123506
JournalApplied Physics Letters
Volume93
Issue number12
DOIs
StatePublished - Oct 6 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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