A comparative study of surface reconstruction of wurtzite GaN on (0 0 0 1) sapphire by RF plasma-assisted molecular beam epitaxy

INIS

• gallium nitrides 83%
• surfaces 66%
• growth 50%
• films 50%
• nucleation 50%
• thin films 33%
• plasma 33%
• sapphire 33%
• data 16%
• transmission electron microscopy 16%
• correlations 16%
• x-ray diffraction 16%
• energy 16%
• substrates 16%
• layers 16%
• reflection 16%
• mobility 16%
• molecular beam epitaxy 16%
• photoluminescence 16%
• mixtures 16%
• radiowave radiation 16%
• electron diffraction 16%
• nitridation 16%

Material Science

• Film 50%
• Sapphire 33%
• Thin Films 33%
• Surface Reconstruction 33%
• Structural Property 33%
• Surface 33%
• Correlation 33%
• Hall Mobility 16%
• Reflection High-Energy Electron Diffraction 16%
• Nitriding 16%
• Mixture 16%
• X-Ray Diffractogram 16%

Physics

• Nucleation 100%
• Growth 50%
• Thin Films 33%
• Wurtzite 33%
• Transmission Electron Microscopy 16%
• Molecular Beam Epitaxy 16%
• Photoluminescence 16%
• Plasma Frequencies 16%
• Domains 16%
• Substrates 16%
• Mixtures 16%