A comparison study of diamond films grown on tungsten carbide cobalt tool inserts with CH4 and CF4 gas sources

K. J. Grannen; F. Xiong; R. P.H. Chang

doi:10.1016/0257-8972(93)90033-K

A comparison study of diamond films grown on tungsten carbide cobalt tool inserts with CH₄ and CF₄ gas sources

K. J. Grannen^*, F. Xiong, R. P.H. Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The results of a comparison study of continuous diamond coatings deposited on tungsten carbide-6% cobalt tool inserts using CF₄ and CH₄ gas sources are presented. The CH₄ grown diamond film utilizes a thin (1200 Å) amorphous silicon interlayer for adhesion while the CF₄ diamond film is deposited directly onto the tool insert. The films are characterized by scanning and transmission electron microscopy, and Raman spectroscopy and are diamond. Diamond films produced with CF₄ gas have much higher (nearly a factor of 4) growth rates and better adhesion (about a factor of 3) than diamond films grown with CH₄ gas. An aluminum-17% Si alloy is machined with the diamond-coated tool inserts to determine their performance in a machining environment. Using CF₄, diamond is believed to grow by first removing the tungsten from the tungsten carbide to expose the underlying carbon atoms. Subsequent carbon containing gaseous species can then bond to the exposed carbon and initiate and propagate diamond growth.

Original language	English (US)
Pages (from-to)	155-162
Number of pages	8
Journal	Surface and Coatings Technology
Volume	57
Issue number	2-3
DOIs	https://doi.org/10.1016/0257-8972(93)90033-K
State	Published - May 28 1993

Funding

The authors would like to thank Dean Edwards and his staff at Ingersoll Cutting Tools for providing and machining the tool insert samples. This work is supported by the Department of Energy under contract number DE-FG02-87ER45314 and the Office of Naval Research.

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/0257-8972(93)90033-K

Cite this

@article{e5a6859ccbd64d36a8d99285222a6dc7,

title = "A comparison study of diamond films grown on tungsten carbide cobalt tool inserts with CH4 and CF4 gas sources",

abstract = "The results of a comparison study of continuous diamond coatings deposited on tungsten carbide-6% cobalt tool inserts using CF4 and CH4 gas sources are presented. The CH4 grown diamond film utilizes a thin (1200 {\AA}) amorphous silicon interlayer for adhesion while the CF4 diamond film is deposited directly onto the tool insert. The films are characterized by scanning and transmission electron microscopy, and Raman spectroscopy and are diamond. Diamond films produced with CF4 gas have much higher (nearly a factor of 4) growth rates and better adhesion (about a factor of 3) than diamond films grown with CH4 gas. An aluminum-17% Si alloy is machined with the diamond-coated tool inserts to determine their performance in a machining environment. Using CF4, diamond is believed to grow by first removing the tungsten from the tungsten carbide to expose the underlying carbon atoms. Subsequent carbon containing gaseous species can then bond to the exposed carbon and initiate and propagate diamond growth.",

author = "Grannen, {K. J.} and F. Xiong and Chang, {R. P.H.}",

note = "Funding Information: The authors would like to thank Dean Edwards and his staff at Ingersoll Cutting Tools for providing and machining the tool insert samples. This work is supported by the Department of Energy under contract number DE-FG02-87ER45314 and the Office of Naval Research.",

year = "1993",

month = may,

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doi = "10.1016/0257-8972(93)90033-K",

language = "English (US)",

volume = "57",

pages = "155--162",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier B.V.",

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T1 - A comparison study of diamond films grown on tungsten carbide cobalt tool inserts with CH4 and CF4 gas sources

AU - Grannen, K. J.

AU - Xiong, F.

AU - Chang, R. P.H.

N1 - Funding Information: The authors would like to thank Dean Edwards and his staff at Ingersoll Cutting Tools for providing and machining the tool insert samples. This work is supported by the Department of Energy under contract number DE-FG02-87ER45314 and the Office of Naval Research.

PY - 1993/5/28

Y1 - 1993/5/28

N2 - The results of a comparison study of continuous diamond coatings deposited on tungsten carbide-6% cobalt tool inserts using CF4 and CH4 gas sources are presented. The CH4 grown diamond film utilizes a thin (1200 Å) amorphous silicon interlayer for adhesion while the CF4 diamond film is deposited directly onto the tool insert. The films are characterized by scanning and transmission electron microscopy, and Raman spectroscopy and are diamond. Diamond films produced with CF4 gas have much higher (nearly a factor of 4) growth rates and better adhesion (about a factor of 3) than diamond films grown with CH4 gas. An aluminum-17% Si alloy is machined with the diamond-coated tool inserts to determine their performance in a machining environment. Using CF4, diamond is believed to grow by first removing the tungsten from the tungsten carbide to expose the underlying carbon atoms. Subsequent carbon containing gaseous species can then bond to the exposed carbon and initiate and propagate diamond growth.

AB - The results of a comparison study of continuous diamond coatings deposited on tungsten carbide-6% cobalt tool inserts using CF4 and CH4 gas sources are presented. The CH4 grown diamond film utilizes a thin (1200 Å) amorphous silicon interlayer for adhesion while the CF4 diamond film is deposited directly onto the tool insert. The films are characterized by scanning and transmission electron microscopy, and Raman spectroscopy and are diamond. Diamond films produced with CF4 gas have much higher (nearly a factor of 4) growth rates and better adhesion (about a factor of 3) than diamond films grown with CH4 gas. An aluminum-17% Si alloy is machined with the diamond-coated tool inserts to determine their performance in a machining environment. Using CF4, diamond is believed to grow by first removing the tungsten from the tungsten carbide to expose the underlying carbon atoms. Subsequent carbon containing gaseous species can then bond to the exposed carbon and initiate and propagate diamond growth.

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