A computationally efficient, non-equilibrium, carrier temperature dependent semiconductor gain model for FDTD simulation of optoelectronic devices

Koustuban Ravi; Yingyan Huang; Seng Tiong Ho

doi:10.1109/NUSOD.2011.6041166

A computationally efficient, non-equilibrium, carrier temperature dependent semiconductor gain model for FDTD simulation of optoelectronic devices

Koustuban Ravi^*, Yingyan Huang, Seng Tiong Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We report a Finite Difference Time Domain (FDTD) model incorporating carrier heating/cooling for the first time. The proposed model thermalizes non equilibrium carrier distributions through carrier temperature dependent intraband transition terms. This multi-level, multi-electron model is formulated to be computationally efficient despite its physical complexity and hence presents potential for the development of powerful general optoelectronic device simulators for devices of arbitrary geometry. Results of carrier distribution thermalization and comparisons to non linear gain experiments are provided to validate the model.

Original language	English (US)
Title of host publication	11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011
Pages	113-114
Number of pages	2
DOIs	https://doi.org/10.1109/NUSOD.2011.6041166
State	Published - 2011
Event	11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011 - Rome, Italy Duration: Sep 5 2011 → Sep 8 2011

Publication series

Name	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
ISSN (Print)	2158-3234

Other

Other	11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011
Country/Territory	Italy
City	Rome
Period	9/5/11 → 9/8/11

Keywords

Finite Difference Methods
Semiconductor Device Modelling
Semiconductor Opical Amplifiers

ASJC Scopus subject areas

Electrical and Electronic Engineering
Modeling and Simulation

Access to Document

10.1109/NUSOD.2011.6041166

Cite this

Ravi, K., Huang, Y., & Ho, S. T. (2011). A computationally efficient, non-equilibrium, carrier temperature dependent semiconductor gain model for FDTD simulation of optoelectronic devices. In 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011 (pp. 113-114). Article 6041166 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD). https://doi.org/10.1109/NUSOD.2011.6041166

Ravi, Koustuban ; Huang, Yingyan ; Ho, Seng Tiong. / A computationally efficient, non-equilibrium, carrier temperature dependent semiconductor gain model for FDTD simulation of optoelectronic devices. 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011. 2011. pp. 113-114 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD).

@inproceedings{12e27dc3fd064d1798a614ed77eaf581,

title = "A computationally efficient, non-equilibrium, carrier temperature dependent semiconductor gain model for FDTD simulation of optoelectronic devices",

abstract = "We report a Finite Difference Time Domain (FDTD) model incorporating carrier heating/cooling for the first time. The proposed model thermalizes non equilibrium carrier distributions through carrier temperature dependent intraband transition terms. This multi-level, multi-electron model is formulated to be computationally efficient despite its physical complexity and hence presents potential for the development of powerful general optoelectronic device simulators for devices of arbitrary geometry. Results of carrier distribution thermalization and comparisons to non linear gain experiments are provided to validate the model.",

keywords = "Finite Difference Methods, Semiconductor Device Modelling, Semiconductor Opical Amplifiers",

author = "Koustuban Ravi and Yingyan Huang and Ho, {Seng Tiong}",

year = "2011",

doi = "10.1109/NUSOD.2011.6041166",

language = "English (US)",

isbn = "9781612848785",

series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",

pages = "113--114",

booktitle = "11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011",

note = "11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011 ; Conference date: 05-09-2011 Through 08-09-2011",

}

Ravi, K, Huang, Y & Ho, ST 2011, A computationally efficient, non-equilibrium, carrier temperature dependent semiconductor gain model for FDTD simulation of optoelectronic devices. in 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011., 6041166, Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD, pp. 113-114, 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011, Rome, Italy, 9/5/11. https://doi.org/10.1109/NUSOD.2011.6041166

A computationally efficient, non-equilibrium, carrier temperature dependent semiconductor gain model for FDTD simulation of optoelectronic devices. / Ravi, Koustuban; Huang, Yingyan; Ho, Seng Tiong.
11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011. 2011. p. 113-114 6041166 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - We report a Finite Difference Time Domain (FDTD) model incorporating carrier heating/cooling for the first time. The proposed model thermalizes non equilibrium carrier distributions through carrier temperature dependent intraband transition terms. This multi-level, multi-electron model is formulated to be computationally efficient despite its physical complexity and hence presents potential for the development of powerful general optoelectronic device simulators for devices of arbitrary geometry. Results of carrier distribution thermalization and comparisons to non linear gain experiments are provided to validate the model.

AB - We report a Finite Difference Time Domain (FDTD) model incorporating carrier heating/cooling for the first time. The proposed model thermalizes non equilibrium carrier distributions through carrier temperature dependent intraband transition terms. This multi-level, multi-electron model is formulated to be computationally efficient despite its physical complexity and hence presents potential for the development of powerful general optoelectronic device simulators for devices of arbitrary geometry. Results of carrier distribution thermalization and comparisons to non linear gain experiments are provided to validate the model.

KW - Finite Difference Methods

KW - Semiconductor Device Modelling

KW - Semiconductor Opical Amplifiers

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BT - 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011

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Ravi K, Huang Y, Ho ST. A computationally efficient, non-equilibrium, carrier temperature dependent semiconductor gain model for FDTD simulation of optoelectronic devices. In 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011. 2011. p. 113-114. 6041166. (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD). doi: 10.1109/NUSOD.2011.6041166

A computationally efficient, non-equilibrium, carrier temperature dependent semiconductor gain model for FDTD simulation of optoelectronic devices

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