A computer-controlled time-of-flight atom-probe field-ion microscope for the study of defects in metals

T. M. Hall*, A. Wagner, D. N. Seidman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

A time-of-flight (TOF) atom-probe field-ion microscope (FIM) specifically designed for the study of defects in metals is described. This atom probe features (i) a variable-magnification internal image-intensification system based on a channel electron multiplier array for viewing the FIM image; (ii) a liquid-helium-cooled goniometer stage which allows the specimen to be maintained at a temperature anywhere in the range 13-450K; (iii) a low-energy (<or=3 keV) gas ion gun for in situ irradiations; (iv) an ultra-high-vacuum (about 4*10-8 Pa) chamber to minimize specimen contamination; (v) a high-vacuum (about 1.33*10-4 Pa) specimen-exchange device; (vi) a Chevron ion detector; and (vii) an eight-channel digital timer with +or-10 ns resolution for measuring the TOFS of the pulsed-field-evaporated ions. The entire process of applying the evaporation pulse to the specimen, measuring the DC and pulse voltages and analysing the TOF data is controlled by a Nova 1220 computer.

Original languageEnglish (US)
Article number013
Pages (from-to)884-891
Number of pages8
JournalJournal of Physics E: Scientific Instruments
Volume10
Issue number9
DOIs
StatePublished - 1977

ASJC Scopus subject areas

  • Instrumentation
  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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