Abstract
A Cu interconnect process for the 130 nm logic process technology generation using dual damascene copper interconnects and fluorosilicate glass (FSG) was described. The technology exhibited 30% lower sheet resistances at the same metal pitch due to use of Cu with higher aspect ratios. It achieved minimal erosion due to use of the chemical mechanical polishing (CMP) process, and demonstrated high yield on both 200 nm and 300 nm wafers.
Original language | English (US) |
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Pages (from-to) | 39-41 |
Number of pages | 3 |
Journal | Advanced Metallization Conference (AMC) |
State | Published - Dec 1 2001 |
Event | Advanced Metallization Conference 2001 (AMC 2001) - Montreal, Que., Canada Duration: Oct 8 2001 → Oct 11 2001 |
ASJC Scopus subject areas
- Chemical Engineering(all)