A domain decomposition method for Silicon devices

Carlo Cercignani*, Irene M. Gamba, Joseph W. Jerome, Chi Wang Shu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A mesoscopic/macroscopic model for self-consistent charged transport under high field scaling conditions corresponding to drift-collisions balance was derived by Cercignani, Gamba, and Levermore in [4]. The model was summarized in relationship to semiconductors in [2]. In [3], a conceptual domain decomposition method was implemented, based upon use of the drift-diffusion model in highly-doped regions of the device, and use of the high-field model in the channel, which represents a (relatively) lightly-doped region. The hydrodynamic model was used to calibrate interior boundary conditions. The material parameters of GaAs were employed in [3]. This paper extends the approach of [3]. • Benchmark comparisons are described for a Silicon n+ - n -n+ diode. A global kinetic model is simulated with Silicon parameters. These simulations are sensitive to the choice of mobility/relaxation. • An elementary global domain decomposition method is presented. Mobilities are selected consistently with respect to the kinetic model. This study underscores the significance of the asymptotic parameter η defined below, as the ratio of drift and thermal velocities as a way to measure the change in velocity scales. This parameter gauges the effectiveness of the high field model.

Original languageEnglish (US)
Pages (from-to)525-536
Number of pages12
JournalTransport Theory and Statistical Physics
Volume29
Issue number3-5
DOIs
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Mathematical Physics
  • Transportation
  • Physics and Astronomy(all)
  • Applied Mathematics

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