A mesoscopic/macroscopic model for self-consistent charged transport under high field scaling conditions corresponding to drift-collisions balance was derived by Cercignani, Gamba, and Levermore in . The model was summarized in relationship to semiconductors in . In , a conceptual domain decomposition method was implemented, based upon use of the drift-diffusion model in highly-doped regions of the device, and use of the high-field model in the channel, which represents a (relatively) lightly-doped region. The hydrodynamic model was used to calibrate interior boundary conditions. The material parameters of GaAs were employed in . This paper extends the approach of . • Benchmark comparisons are described for a Silicon n+ - n -n+ diode. A global kinetic model is simulated with Silicon parameters. These simulations are sensitive to the choice of mobility/relaxation. • An elementary global domain decomposition method is presented. Mobilities are selected consistently with respect to the kinetic model. This study underscores the significance of the asymptotic parameter η defined below, as the ratio of drift and thermal velocities as a way to measure the change in velocity scales. This parameter gauges the effectiveness of the high field model.
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Mathematical Physics
- Physics and Astronomy(all)
- Applied Mathematics