A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate

M. Razeghi; F. Omnes; R. Blondeau; Ph Maurel; M. Defour; O. Acher; E. Vassilakis; G. Mesquida; J. C C Fan; J. P. Salerno

doi:10.1063/1.343334

A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate

M. Razeghi^*, F. Omnes, R. Blondeau, Ph Maurel, M. Defour, O. Acher, E. Vassilakis, G. Mesquida, J. C C Fan, J. P. Salerno

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We report the first Ga_0.47In_0.53As-InP photodetectors fabricated on silicon substrates, using the low-pressure metalorganic chemical vapor deposition growth technique. Quantum efficiencies of 0.34, 0.88, and 0.92, A/W at wavelengths of 0.8, 1.3, and 1.55 μm, respectively, have been obtained for the devices without antireflection coating. A reverse leakage current of 100 μA at -10 V bias was measured for 250-μm-diam diodes.

Original language	English (US)
Pages (from-to)	4066-4068
Number of pages	3
Journal	Journal of Applied Physics
Volume	65
Issue number	10
DOIs	https://doi.org/10.1063/1.343334
State	Published - 1989

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.343334

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title = "A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate",

abstract = "We report the first Ga0.47In0.53As-InP photodetectors fabricated on silicon substrates, using the low-pressure metalorganic chemical vapor deposition growth technique. Quantum efficiencies of 0.34, 0.88, and 0.92, A/W at wavelengths of 0.8, 1.3, and 1.55 μm, respectively, have been obtained for the devices without antireflection coating. A reverse leakage current of 100 μA at -10 V bias was measured for 250-μm-diam diodes.",

author = "M. Razeghi and F. Omnes and R. Blondeau and Ph Maurel and M. Defour and O. Acher and E. Vassilakis and G. Mesquida and Fan, {J. C C} and Salerno, {J. P.}",

year = "1989",

doi = "10.1063/1.343334",

language = "English (US)",

volume = "65",

pages = "4066--4068",

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TY - JOUR

T1 - A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate

AU - Razeghi, M.

AU - Omnes, F.

AU - Blondeau, R.

AU - Maurel, Ph

AU - Defour, M.

AU - Acher, O.

AU - Vassilakis, E.

AU - Mesquida, G.

AU - Fan, J. C C

AU - Salerno, J. P.

PY - 1989

Y1 - 1989

N2 - We report the first Ga0.47In0.53As-InP photodetectors fabricated on silicon substrates, using the low-pressure metalorganic chemical vapor deposition growth technique. Quantum efficiencies of 0.34, 0.88, and 0.92, A/W at wavelengths of 0.8, 1.3, and 1.55 μm, respectively, have been obtained for the devices without antireflection coating. A reverse leakage current of 100 μA at -10 V bias was measured for 250-μm-diam diodes.

AB - We report the first Ga0.47In0.53As-InP photodetectors fabricated on silicon substrates, using the low-pressure metalorganic chemical vapor deposition growth technique. Quantum efficiencies of 0.34, 0.88, and 0.92, A/W at wavelengths of 0.8, 1.3, and 1.55 μm, respectively, have been obtained for the devices without antireflection coating. A reverse leakage current of 100 μA at -10 V bias was measured for 250-μm-diam diodes.

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DO - 10.1063/1.343334

M3 - Article

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VL - 65

SP - 4066

EP - 4068

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate

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