A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate

M. Razeghi*, F. Omnes, R. Blondeau, Ph Maurel, M. Defour, O. Acher, E. Vassilakis, G. Mesquida, J. C C Fan, J. P. Salerno

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We report the first Ga0.47In0.53As-InP photodetectors fabricated on silicon substrates, using the low-pressure metalorganic chemical vapor deposition growth technique. Quantum efficiencies of 0.34, 0.88, and 0.92, A/W at wavelengths of 0.8, 1.3, and 1.55 μm, respectively, have been obtained for the devices without antireflection coating. A reverse leakage current of 100 μA at -10 V bias was measured for 250-μm-diam diodes.

Original languageEnglish (US)
Pages (from-to)4066-4068
Number of pages3
JournalJournal of Applied Physics
Volume65
Issue number10
DOIs
StatePublished - 1989

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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