A hybrid green light-emitting diode comprised of n-ZnO/ (InGaN/GaN) multi-quantum-wells/ p-GaN

C. Bayram*, F. Hosseini Teherani, D. J. Rogers, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

63 Scopus citations

Abstract

Hybrid green light-emitting diodes (LEDs) comprised of n-ZnO/ (InGaN/GaN) multi-quantum-wells/ p-GaN were grown on semi-insulating AlN/sapphire using pulsed laser deposition for the n-ZnO and metal organic chemical vapor deposition for the other layers. X-ray diffraction revealed that high crystallographic quality was preserved after the n-ZnO growth. LEDs showed a turn-on voltage of 2.5 V and a room temperature electroluminescence (EL) centered at 510 nm. A blueshift and narrowing of the EL peak with increasing current was attributed to bandgap renormalization. The results indicate that hybrid LED structures could hold the prospect for the development of green LEDs with superior performance.

Original languageEnglish (US)
Article number081111
JournalApplied Physics Letters
Volume93
Issue number8
DOIs
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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