A model reduction based approach for extracting the diffusion and generation terms of pn junction leakage current

Pedram Khalili Amiri*, Saeed Fathololoumi, Bizhan Rashidian

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Using a model reduction method, a formula for the ideality factor of a pn junction as a function of the diffusion and generation terms of its reverse current is derived. Using this formula a method for separate computation of these two currents for a pn junction is presented. The validity of the method is investigated using computer simulations for an assumed diode with known ideality factor and total leakage current. Experimental results for two commercially available diodes validate the proposed technique.

Original languageEnglish (US)
Pages (from-to)234-240
Number of pages7
JournalSemiconductor Science and Technology
Volume18
Issue number4
DOIs
StatePublished - Apr 1 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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