A model reduction based approach for extracting the diffusion and generation terms of pn junction leakage current

Pedram Khalili Amiri; Saeed Fathololoumi; Bizhan Rashidian

doi:10.1088/0268-1242/18/4/307

A model reduction based approach for extracting the diffusion and generation terms of pn junction leakage current

Pedram Khalili Amiri^*, Saeed Fathololoumi, Bizhan Rashidian

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Using a model reduction method, a formula for the ideality factor of a pn junction as a function of the diffusion and generation terms of its reverse current is derived. Using this formula a method for separate computation of these two currents for a pn junction is presented. The validity of the method is investigated using computer simulations for an assumed diode with known ideality factor and total leakage current. Experimental results for two commercially available diodes validate the proposed technique.

Original language	English (US)
Pages (from-to)	234-240
Number of pages	7
Journal	Semiconductor Science and Technology
Volume	18
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/18/4/307
State	Published - Apr 1 2003

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "Using a model reduction method, a formula for the ideality factor of a pn junction as a function of the diffusion and generation terms of its reverse current is derived. Using this formula a method for separate computation of these two currents for a pn junction is presented. The validity of the method is investigated using computer simulations for an assumed diode with known ideality factor and total leakage current. Experimental results for two commercially available diodes validate the proposed technique.",

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AB - Using a model reduction method, a formula for the ideality factor of a pn junction as a function of the diffusion and generation terms of its reverse current is derived. Using this formula a method for separate computation of these two currents for a pn junction is presented. The validity of the method is investigated using computer simulations for an assumed diode with known ideality factor and total leakage current. Experimental results for two commercially available diodes validate the proposed technique.

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