TY - GEN
T1 - A new metamaterial for MRI-safe deep brain stimulation leads
AU - Marturano, Francesca
AU - Golestanirad, Laleh
AU - Bonmassar, Giorgio
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Deep Brain Stimulation (DBS) leads have become a valuable tool in neuroscience for diagnosing and treating various neurological conditions, including Parkinson's disease [1]. However, commercially available leads have limited compatibility with magnetic resonance imaging (MRI), hindering the possibility for patients with intracranial implants to benefit from the diagnostic potential of functional MRI [2]. Therefore, the development of MRI-safe DBS leads is necessary to promote new advances in the field. Here, we propose a novel technology to fabricate the internal microwires of DBS leads, that was specifically designed to ensure safe operation with MRI up to 3T. The technology is designed to include a steep interface between two segments of metals that are layered onto a non-conductive substrate. The abrupt resistance variation at the interface breaks up the RF-induced current, reducing distal electrode heating, specific absorption rate (SAR), and MRI artifacts [3].
AB - Deep Brain Stimulation (DBS) leads have become a valuable tool in neuroscience for diagnosing and treating various neurological conditions, including Parkinson's disease [1]. However, commercially available leads have limited compatibility with magnetic resonance imaging (MRI), hindering the possibility for patients with intracranial implants to benefit from the diagnostic potential of functional MRI [2]. Therefore, the development of MRI-safe DBS leads is necessary to promote new advances in the field. Here, we propose a novel technology to fabricate the internal microwires of DBS leads, that was specifically designed to ensure safe operation with MRI up to 3T. The technology is designed to include a steep interface between two segments of metals that are layered onto a non-conductive substrate. The abrupt resistance variation at the interface breaks up the RF-induced current, reducing distal electrode heating, specific absorption rate (SAR), and MRI artifacts [3].
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U2 - 10.1109/ICEAA57318.2023.10297949
DO - 10.1109/ICEAA57318.2023.10297949
M3 - Conference contribution
AN - SCOPUS:85178521935
T3 - 2023 International Conference on Electromagnetics in Advanced Applications, ICEAA 2023
SP - 407
BT - 2023 International Conference on Electromagnetics in Advanced Applications, ICEAA 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 25th International Conference on Electromagnetics in Advanced Applications, ICEAA 2023
Y2 - 9 October 2023 through 13 October 2023
ER -