A new method of fabricating gallium arsenide MOS devices

R. P H Chang*, J. J. Coleman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface-state densities (≈5×1010 cm-2).

Original languageEnglish (US)
Pages (from-to)332-333
Number of pages2
JournalApplied Physics Letters
Volume32
Issue number5
DOIs
StatePublished - 1978

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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