A new resonant ellipsometric technique for characterizing the interface between GaAs and its plasma-grown oxide

J. B. Theeten*, D. E. Aspnes, R. P H Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Fingerprint

Dive into the research topics of 'A new resonant ellipsometric technique for characterizing the interface between GaAs and its plasma-grown oxide'. Together they form a unique fingerprint.

INIS

Physics

Material Science

Biochemistry, Genetics and Molecular Biology