A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system

D. D. Edwards; T. O. Mason; F. Goutenoire; K. R. Poeppelmeier

doi:10.1063/1.118676

A new transparent conducting oxide in the Ga₂O₃-In₂O₃-SnO₂ system

D. D. Edwards^*, T. O. Mason, F. Goutenoire, K. R. Poeppelmeier

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

178 Scopus citations

Abstract

A new transparent conducting oxide (TCO), which can be expressed as Ga_3-xIn_5+xSn₂O₁₆; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga₂O₃-In₂O₃-SnO₂ are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm^-1 was obtained for H₂-reduced Ga_2.4In_5.6Sn₂O₁₆. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In₂O₃.

Original language	English (US)
Pages (from-to)	1706-1708
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	13
DOIs	https://doi.org/10.1063/1.118676
State	Published - Mar 31 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system",

abstract = "A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.",

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T1 - A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system

AU - Edwards, D. D.

AU - Mason, T. O.

AU - Goutenoire, F.

AU - Poeppelmeier, K. R.

PY - 1997/3/31

Y1 - 1997/3/31

N2 - A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.

AB - A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.

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A new transparent conducting oxide in the Ga₂O₃-In₂O₃-SnO₂ system

Abstract

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