Abstract
A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.
Original language | English (US) |
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Pages (from-to) | 1706-1708 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 13 |
DOIs | |
State | Published - Mar 31 1997 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)