A novel material for long-wavelength lasers: InNAsP

Charles W. Tu*, W. G. Bi, Y. Ma, J. P. Zhang, L. W. Wang, S. T. Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We show that a novel material InNAsP grown on InP is superior for long-wavelength microdisk lasers (and so expected for edge-emitting lasers) because of its larger conduction band offset from the addition of a small amount of nitrogen (0.5%-1%). The maximum temperature of operation for an InNAsP-GaInAsP microdisk laser is 70 °C, which is about 120 °C higher than that of a similar laser fabricated from GaInAs-GaInAsP. The characteristic temperature To of the former is 97 K, also higher than that of the latter.

Original languageEnglish (US)
Pages (from-to)510-513
Number of pages4
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume4
Issue number3
DOIs
StatePublished - May 1998

Keywords

  • Bandgap bowing
  • Characteristic temperature
  • InNasP
  • Nitrogen incorporation
  • Semiconductor laser

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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