A novel material for long-wavelength lasers: InNAsP

Charles W. Tu; W. G. Bi; Y. Ma; J. P. Zhang; L. W. Wang; S. T. Ho

doi:10.1109/2944.704110

A novel material for long-wavelength lasers: InNAsP

Charles W. Tu^*, W. G. Bi, Y. Ma, J. P. Zhang, L. W. Wang, S. T. Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We show that a novel material InNAsP grown on InP is superior for long-wavelength microdisk lasers (and so expected for edge-emitting lasers) because of its larger conduction band offset from the addition of a small amount of nitrogen (0.5%-1%). The maximum temperature of operation for an InNAsP-GaInAsP microdisk laser is 70 °C, which is about 120 °C higher than that of a similar laser fabricated from GaInAs-GaInAsP. The characteristic temperature T_o of the former is 97 K, also higher than that of the latter.

Original language	English (US)
Pages (from-to)	510-513
Number of pages	4
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	4
Issue number	3
DOIs	https://doi.org/10.1109/2944.704110
State	Published - May 1998

Keywords

Bandgap bowing
Characteristic temperature
InNasP
Nitrogen incorporation
Semiconductor laser

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/2944.704110

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title = "A novel material for long-wavelength lasers: InNAsP",

abstract = "We show that a novel material InNAsP grown on InP is superior for long-wavelength microdisk lasers (and so expected for edge-emitting lasers) because of its larger conduction band offset from the addition of a small amount of nitrogen (0.5%-1%). The maximum temperature of operation for an InNAsP-GaInAsP microdisk laser is 70 °C, which is about 120 °C higher than that of a similar laser fabricated from GaInAs-GaInAsP. The characteristic temperature To of the former is 97 K, also higher than that of the latter.",

keywords = "Bandgap bowing, Characteristic temperature, InNasP, Nitrogen incorporation, Semiconductor laser",

author = "Tu, {Charles W.} and Bi, {W. G.} and Y. Ma and Zhang, {J. P.} and Wang, {L. W.} and Ho, {S. T.}",

note = "Funding Information: Manuscript received November 15, 1997; revised May 1, 1998. The work of C. W. Tu and W. G. Bi was supported in part by the National Science Foundation under Grant DMR-9202692 at the University of California, San Diego. The work of Y. Ma, J. P. Zhang, L. W. Wang, and S. T. Ho was supported in part by the National Science Foundation under Grant ECS-9502475 at Northwestern, University, Evanston, IL.",

year = "1998",

month = may,

doi = "10.1109/2944.704110",

language = "English (US)",

volume = "4",

pages = "510--513",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

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T1 - A novel material for long-wavelength lasers

T2 - InNAsP

AU - Tu, Charles W.

AU - Bi, W. G.

AU - Ma, Y.

AU - Zhang, J. P.

AU - Wang, L. W.

AU - Ho, S. T.

N1 - Funding Information: Manuscript received November 15, 1997; revised May 1, 1998. The work of C. W. Tu and W. G. Bi was supported in part by the National Science Foundation under Grant DMR-9202692 at the University of California, San Diego. The work of Y. Ma, J. P. Zhang, L. W. Wang, and S. T. Ho was supported in part by the National Science Foundation under Grant ECS-9502475 at Northwestern, University, Evanston, IL.

PY - 1998/5

Y1 - 1998/5

N2 - We show that a novel material InNAsP grown on InP is superior for long-wavelength microdisk lasers (and so expected for edge-emitting lasers) because of its larger conduction band offset from the addition of a small amount of nitrogen (0.5%-1%). The maximum temperature of operation for an InNAsP-GaInAsP microdisk laser is 70 °C, which is about 120 °C higher than that of a similar laser fabricated from GaInAs-GaInAsP. The characteristic temperature To of the former is 97 K, also higher than that of the latter.

AB - We show that a novel material InNAsP grown on InP is superior for long-wavelength microdisk lasers (and so expected for edge-emitting lasers) because of its larger conduction band offset from the addition of a small amount of nitrogen (0.5%-1%). The maximum temperature of operation for an InNAsP-GaInAsP microdisk laser is 70 °C, which is about 120 °C higher than that of a similar laser fabricated from GaInAs-GaInAsP. The characteristic temperature To of the former is 97 K, also higher than that of the latter.

KW - Bandgap bowing

KW - Characteristic temperature

KW - InNasP

KW - Nitrogen incorporation

KW - Semiconductor laser

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A novel material for long-wavelength lasers: InNAsP

Abstract

Keywords

ASJC Scopus subject areas

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