A novel material for long-wavelength lasers: InNAsP

Charles W. Tu*, W. G. Bi, Y. Ma, J. P. Zhang, L. W. Wang, S. T. Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We show that a novel material InNAsP grown on InP is superior for long-wavelength microdisk lasers (and so expected for edge-emitting lasers) because of its larger conduction band offset from the addition of a small amount of nitrogen (0.5%-1%). The maximum temperature of operation for an InNAsP-GaInAsP microdisk laser is 70 °C, which is about 120 °C higher than that of a similar laser fabricated from GaInAs-GaInAsP. The characteristic temperature To of the former is 97 K, also higher than that of the latter.

Original languageEnglish (US)
Pages (from-to)510-513
Number of pages4
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume4
Issue number3
DOIs
StatePublished - May 1998

Funding

Manuscript received November 15, 1997; revised May 1, 1998. The work of C. W. Tu and W. G. Bi was supported in part by the National Science Foundation under Grant DMR-9202692 at the University of California, San Diego. The work of Y. Ma, J. P. Zhang, L. W. Wang, and S. T. Ho was supported in part by the National Science Foundation under Grant ECS-9502475 at Northwestern, University, Evanston, IL.

Keywords

  • Bandgap bowing
  • Characteristic temperature
  • InNasP
  • Nitrogen incorporation
  • Semiconductor laser

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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