A novel method for the preparation of III-V semiconductors: Sonochemical synthesis of InP nanocrystals

Bin Li; Yi Xie; Jiaxing Huang; Yu Liu; Yitai Qian

doi:10.1016/S1350-4177(01)00068-2

A novel method for the preparation of III-V semiconductors: Sonochemical synthesis of InP nanocrystals

Bin Li, Yi Xie^*, Jiaxing Huang, Yu Liu, Yitai Qian

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

A novel method for the preparation of III-V semiconductor has been provided in this paper. At room temperature, InP nanocrystals with diameter of ≈9 nm were successfully obtained under high-intensity ultrasonic irradiation for 4 h from the reaction of InCl₃·4H₂O, yellow phosphorus and KBH₄ in the mixed solvents of ethanol and benzene. Changing some parameters can effectively control the size of the products and possible explanations were offered. The products were characterized by X-ray powder diffraction, transmission electron microscope and electron diffraction pattern. The ultrasonic irradiation and the solvents are both important in the formation of the product.

Original language	English (US)
Pages (from-to)	331-334
Number of pages	4
Journal	Ultrasonics Sonochemistry
Volume	8
Issue number	4
DOIs	https://doi.org/10.1016/S1350-4177(01)00068-2
State	Published - 2001

Keywords

InP nanocrystals
Size control
Sonochemical synthesis

ASJC Scopus subject areas

Environmental Chemistry
Chemical Engineering (miscellaneous)
Radiology Nuclear Medicine and imaging
Acoustics and Ultrasonics
Organic Chemistry
Inorganic Chemistry

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10.1016/S1350-4177(01)00068-2

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title = "A novel method for the preparation of III-V semiconductors: Sonochemical synthesis of InP nanocrystals",

abstract = "A novel method for the preparation of III-V semiconductor has been provided in this paper. At room temperature, InP nanocrystals with diameter of ≈9 nm were successfully obtained under high-intensity ultrasonic irradiation for 4 h from the reaction of InCl3·4H2O, yellow phosphorus and KBH4 in the mixed solvents of ethanol and benzene. Changing some parameters can effectively control the size of the products and possible explanations were offered. The products were characterized by X-ray powder diffraction, transmission electron microscope and electron diffraction pattern. The ultrasonic irradiation and the solvents are both important in the formation of the product.",

keywords = "InP nanocrystals, Size control, Sonochemical synthesis",

author = "Bin Li and Yi Xie and Jiaxing Huang and Yu Liu and Yitai Qian",

note = "Funding Information: Financial support from the Chinese National Foundation of Natural Sciences and Chinese Ministry of Education is gratefully acknowledged.",

year = "2001",

doi = "10.1016/S1350-4177(01)00068-2",

language = "English (US)",

volume = "8",

pages = "331--334",

journal = "Ultrasonics Sonochemistry",

issn = "1350-4177",

publisher = "Elsevier",

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TY - JOUR

T1 - A novel method for the preparation of III-V semiconductors

T2 - Sonochemical synthesis of InP nanocrystals

AU - Li, Bin

AU - Xie, Yi

AU - Huang, Jiaxing

AU - Liu, Yu

AU - Qian, Yitai

N1 - Funding Information: Financial support from the Chinese National Foundation of Natural Sciences and Chinese Ministry of Education is gratefully acknowledged.

PY - 2001

Y1 - 2001

N2 - A novel method for the preparation of III-V semiconductor has been provided in this paper. At room temperature, InP nanocrystals with diameter of ≈9 nm were successfully obtained under high-intensity ultrasonic irradiation for 4 h from the reaction of InCl3·4H2O, yellow phosphorus and KBH4 in the mixed solvents of ethanol and benzene. Changing some parameters can effectively control the size of the products and possible explanations were offered. The products were characterized by X-ray powder diffraction, transmission electron microscope and electron diffraction pattern. The ultrasonic irradiation and the solvents are both important in the formation of the product.

AB - A novel method for the preparation of III-V semiconductor has been provided in this paper. At room temperature, InP nanocrystals with diameter of ≈9 nm were successfully obtained under high-intensity ultrasonic irradiation for 4 h from the reaction of InCl3·4H2O, yellow phosphorus and KBH4 in the mixed solvents of ethanol and benzene. Changing some parameters can effectively control the size of the products and possible explanations were offered. The products were characterized by X-ray powder diffraction, transmission electron microscope and electron diffraction pattern. The ultrasonic irradiation and the solvents are both important in the formation of the product.

KW - InP nanocrystals

KW - Size control

KW - Sonochemical synthesis

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DO - 10.1016/S1350-4177(01)00068-2

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AN - SCOPUS:0034926434

SN - 1350-4177

VL - 8

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JO - Ultrasonics Sonochemistry

JF - Ultrasonics Sonochemistry

IS - 4

ER -

A novel method for the preparation of III-V semiconductors: Sonochemical synthesis of InP nanocrystals

Abstract

Keywords

ASJC Scopus subject areas

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