INIS
synthesis
100%
semiconductor materials
100%
nanocrystals
100%
irradiation
100%
indium phosphides
100%
ultrasonics
100%
transmission electron microscopy
50%
x-ray diffraction
50%
size
50%
control
50%
temperature range 0273-0400 k
50%
ethanol
50%
solvents
50%
phosphorus
50%
electron diffraction
50%
borohydrides
50%
benzene
50%
mixed solvents
50%
Chemistry
Semiconductor
100%
Procedure
100%
Synthesis (Chemical)
100%
Chemical Reaction Product
100%
Solvent
66%
Irradiation
66%
Electron Particle
33%
Benzene
33%
Ethanol
33%
Electron Diffraction
33%
Powder X-Ray Diffraction
33%
Ambient Reaction Temperature
33%
Particle Size
33%
Chemical Reaction
33%
Material Science
Nanocrystals
100%
III-V Semiconductor
100%
Solvent
100%
Irradiation
100%
X Ray Powder Diffraction
50%
Diffraction Pattern
50%
Electron Diffraction
50%
Temperature
50%
Physics
Semiconductor
100%
Ultrasonics
100%
Room Temperature
50%
Diffraction Pattern
50%
Electron Diffraction
50%
Powder X-Ray Diffraction
50%
Independent Variables
50%
Diameters
50%