A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices

Y. Huang; S. T. Ho

A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices

Y. Huang^*, S. T. Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We describe a numerically efficient semiconductor model for FDTD simulation of optoelectronic and photonic devices that include the essential carrier dynamics such as band filling with Fermi-Dirac thermalization, spectral hole burning, and refractive index change.

Original language	English (US)
Title of host publication	2005 Quantum Electronics and Laser Science Conference (QELS)
Pages	253-255
Number of pages	3
State	Published - 2005
Event	2005 Quantum Electronics and Laser Science Conference (QELS) - Baltimore, MD, United States Duration: May 22 2005 → May 27 2005

Publication series

Name	Quantum Electronics and Laser Science Conference (QELS)
Volume	1

Other

Other	2005 Quantum Electronics and Laser Science Conference (QELS)
Country/Territory	United States
City	Baltimore, MD
Period	5/22/05 → 5/27/05

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{75b860830e4f4fdd98618e3116ac581f,

title = "A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices",

abstract = "We describe a numerically efficient semiconductor model for FDTD simulation of optoelectronic and photonic devices that include the essential carrier dynamics such as band filling with Fermi-Dirac thermalization, spectral hole burning, and refractive index change.",

author = "Y. Huang and Ho, {S. T.}",

year = "2005",

language = "English (US)",

isbn = "1557527962",

series = "Quantum Electronics and Laser Science Conference (QELS)",

pages = "253--255",

booktitle = "2005 Quantum Electronics and Laser Science Conference (QELS)",

note = "2005 Quantum Electronics and Laser Science Conference (QELS) ; Conference date: 22-05-2005 Through 27-05-2005",

}

Huang, Y & Ho, ST 2005, A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices. in 2005 Quantum Electronics and Laser Science Conference (QELS)., QTuD7, Quantum Electronics and Laser Science Conference (QELS), vol. 1, pp. 253-255, 2005 Quantum Electronics and Laser Science Conference (QELS), Baltimore, MD, United States, 5/22/05.

A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices. / Huang, Y.; Ho, S. T.
2005 Quantum Electronics and Laser Science Conference (QELS). 2005. p. 253-255 QTuD7 (Quantum Electronics and Laser Science Conference (QELS); Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices

AU - Huang, Y.

AU - Ho, S. T.

PY - 2005

Y1 - 2005

N2 - We describe a numerically efficient semiconductor model for FDTD simulation of optoelectronic and photonic devices that include the essential carrier dynamics such as band filling with Fermi-Dirac thermalization, spectral hole burning, and refractive index change.

AB - We describe a numerically efficient semiconductor model for FDTD simulation of optoelectronic and photonic devices that include the essential carrier dynamics such as band filling with Fermi-Dirac thermalization, spectral hole burning, and refractive index change.

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M3 - Conference contribution

AN - SCOPUS:27144533595

SN - 1557527962

SN - 9781557527967

T3 - Quantum Electronics and Laser Science Conference (QELS)

SP - 253

EP - 255

BT - 2005 Quantum Electronics and Laser Science Conference (QELS)

T2 - 2005 Quantum Electronics and Laser Science Conference (QELS)

Y2 - 22 May 2005 through 27 May 2005

ER -

A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices

Abstract

Publication series

Other

ASJC Scopus subject areas

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