A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We describe a numerically efficient semiconductor model for FDTD simulation of optoelectronic and photonic devices that include the essential carrier dynamics such as band filling with Fermi-Dirac thermalization, spectral hole burning, and refractive index change.

Original languageEnglish (US)
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2005
PublisherOptical Society of America
ISBN (Print)1557527709, 9781557527707
StatePublished - Jan 1 2005
EventQuantum Electronics and Laser Science Conference, QELS 2005 - Baltimore, MD, United States
Duration: May 22 2005May 22 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2005
CountryUnited States
CityBaltimore, MD
Period5/22/055/22/05

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ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Huang, Y., & Ho, S. T. (2005). A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices. In Quantum Electronics and Laser Science Conference, QELS 2005 (Optics InfoBase Conference Papers). Optical Society of America.