Abstract
We analyze the performance of a particle detector based on a double-barrier Nb/Al/AlOx/Al/AlOx/Al/Nb junction where the Al trapping layer is embedded between two insulating AlOx barriers. Within this layer, a very sharp Andreev bound state (ABS) level Eo is formed. Because of a very long recombination time, the charge amplification factor is expected to be 10-100 times larger in the double-barrier detector compared to ordinary single-barrier devices. The double barrier detector also has much higher idle-state subgap resistance at low temperatures. Because the middle Al quasiparticle trap layer is separated from the adjacent layers by two insulating tunneling barriers, the proximity effect is minimized. This provides much better alignment between the maximum of nonequilibrium quasiparticle distribution function and the maximum in the electron density of states. All the factors listed result in much higher sensitivity and the energy resolution of the double barrier Nb-based STJ as compared to their single-barrier analogs.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 944-947 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Applied Superconductivity |
| Volume | 15 |
| Issue number | 2 PART I |
| DOIs | |
| State | Published - Jun 2005 |
Funding
Manuscript received October 4, 2004. This work was supported by the National Science Foundation under Grant EIA-0218652.
Keywords
- Andreev bound states
- Double-barrier junction
- Nonequilibrium distribution
- Particle and X-ray detector
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering