A path to 10% efficiency for tin sulfide devices

Niall M. Mangan; Riley E. Brandt; Vera Steinmann; R. Jaramillo; Jian V. Li; Jeremy R. Poindexter; Katy Hartman; Leizhi Sun; Roy G. Gordon; Tonio Buonassisi

doi:10.1109/PVSC.2014.6925404

A path to 10% efficiency for tin sulfide devices

Niall M. Mangan, Riley E. Brandt, Vera Steinmann, R. Jaramillo, Jian V. Li, Jeremy R. Poindexter, Katy Hartman, Leizhi Sun, Roy G. Gordon, Tonio Buonassisi

Engineering Sciences and Applied Mathematics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Scopus citations

Abstract

We preform device simulations of a tin sulfide (SnS) device stack using SCAPS to define a path to 10% efficient devices. We determine and constrain a baseline device model using recent experimental results on one of our 3.9% efficient cells. Through a multistep fitting process, we find a conduction band cliff of -0.2 eV between SnS and Zn(O,S) to be limiting the open circuit voltage (V_OC). To move towards a higher efficiency, we can optimize the buffer layer band alignment. Improvement of the SnS lifetime to >1 ns is necessary to reach 10% efficiency. Additionally, absorber-buffer interface recombination must be suppressed, either by reducing recombination activity of defects or creating a strong inversion layer at the interface.

Original language	English (US)
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2373-2378
Number of pages	6
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925404
State	Published - Oct 15 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: Jun 8 2014 → Jun 13 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	6/8/14 → 6/13/14

Keywords

chalcogenide solar cells
device simulation
paths toward higher efficiency

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2014.6925404

Cite this

Mangan, N. M., Brandt, R. E., Steinmann, V., Jaramillo, R., Li, J. V., Poindexter, J. R., Hartman, K., Sun, L., Gordon, R. G., & Buonassisi, T. (2014). A path to 10% efficiency for tin sulfide devices. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2373-2378). [6925404] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925404

@inproceedings{873794071d994a0aa52dfeb87020d7b3,

title = "A path to 10% efficiency for tin sulfide devices",

abstract = "We preform device simulations of a tin sulfide (SnS) device stack using SCAPS to define a path to 10% efficient devices. We determine and constrain a baseline device model using recent experimental results on one of our 3.9% efficient cells. Through a multistep fitting process, we find a conduction band cliff of -0.2 eV between SnS and Zn(O,S) to be limiting the open circuit voltage (VOC). To move towards a higher efficiency, we can optimize the buffer layer band alignment. Improvement of the SnS lifetime to >1 ns is necessary to reach 10% efficiency. Additionally, absorber-buffer interface recombination must be suppressed, either by reducing recombination activity of defects or creating a strong inversion layer at the interface.",

keywords = "chalcogenide solar cells, device simulation, paths toward higher efficiency",

author = "Mangan, {Niall M.} and Brandt, {Riley E.} and Vera Steinmann and R. Jaramillo and Li, {Jian V.} and Poindexter, {Jeremy R.} and Katy Hartman and Leizhi Sun and Gordon, {Roy G.} and Tonio Buonassisi",

year = "2014",

month = oct,

day = "15",

doi = "10.1109/PVSC.2014.6925404",

language = "English (US)",

pages = "2373--2378",

booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

}

Mangan, NM, Brandt, RE, Steinmann, V, Jaramillo, R, Li, JV, Poindexter, JR, Hartman, K, Sun, L, Gordon, RG & Buonassisi, T 2014, A path to 10% efficiency for tin sulfide devices. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925404, Institute of Electrical and Electronics Engineers Inc., pp. 2373-2378, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925404

TY - GEN

T1 - A path to 10% efficiency for tin sulfide devices

AU - Mangan, Niall M.

AU - Brandt, Riley E.

AU - Steinmann, Vera

AU - Jaramillo, R.

AU - Li, Jian V.

AU - Poindexter, Jeremy R.

AU - Hartman, Katy

AU - Sun, Leizhi

AU - Gordon, Roy G.

AU - Buonassisi, Tonio

PY - 2014/10/15

Y1 - 2014/10/15

N2 - We preform device simulations of a tin sulfide (SnS) device stack using SCAPS to define a path to 10% efficient devices. We determine and constrain a baseline device model using recent experimental results on one of our 3.9% efficient cells. Through a multistep fitting process, we find a conduction band cliff of -0.2 eV between SnS and Zn(O,S) to be limiting the open circuit voltage (VOC). To move towards a higher efficiency, we can optimize the buffer layer band alignment. Improvement of the SnS lifetime to >1 ns is necessary to reach 10% efficiency. Additionally, absorber-buffer interface recombination must be suppressed, either by reducing recombination activity of defects or creating a strong inversion layer at the interface.

AB - We preform device simulations of a tin sulfide (SnS) device stack using SCAPS to define a path to 10% efficient devices. We determine and constrain a baseline device model using recent experimental results on one of our 3.9% efficient cells. Through a multistep fitting process, we find a conduction band cliff of -0.2 eV between SnS and Zn(O,S) to be limiting the open circuit voltage (VOC). To move towards a higher efficiency, we can optimize the buffer layer band alignment. Improvement of the SnS lifetime to >1 ns is necessary to reach 10% efficiency. Additionally, absorber-buffer interface recombination must be suppressed, either by reducing recombination activity of defects or creating a strong inversion layer at the interface.

KW - chalcogenide solar cells

KW - device simulation

KW - paths toward higher efficiency

UR - http://www.scopus.com/inward/record.url?scp=84912097568&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912097568&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2014.6925404

DO - 10.1109/PVSC.2014.6925404

M3 - Conference contribution

AN - SCOPUS:84912097568

SP - 2373

EP - 2378

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

A path to 10% efficiency for tin sulfide devices

Abstract

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this