A path to 10% efficiency for tin sulfide devices

Niall M. Mangan, Riley E. Brandt, Vera Steinmann, R. Jaramillo, Jian V. Li, Jeremy R. Poindexter, Katy Hartman, Leizhi Sun, Roy G. Gordon, Tonio Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations


We preform device simulations of a tin sulfide (SnS) device stack using SCAPS to define a path to 10% efficient devices. We determine and constrain a baseline device model using recent experimental results on one of our 3.9% efficient cells. Through a multistep fitting process, we find a conduction band cliff of -0.2 eV between SnS and Zn(O,S) to be limiting the open circuit voltage (VOC). To move towards a higher efficiency, we can optimize the buffer layer band alignment. Improvement of the SnS lifetime to >1 ns is necessary to reach 10% efficiency. Additionally, absorber-buffer interface recombination must be suppressed, either by reducing recombination activity of defects or creating a strong inversion layer at the interface.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages6
ISBN (Electronic)9781479943982
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014


Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States


  • chalcogenide solar cells
  • device simulation
  • paths toward higher efficiency

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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